DMN3026LVTQ-7 Diodes Incorporated

DMN3026LVTQ 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Low Input Capacitance D BV R Max DSS DS(ON) T = +25C Low On-Resistance A Fast Switching Speed 23m V = 10V 6.6A GS 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 30m V = 4.5V 5.8A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description PPAP Capable (Note 4) This new generation MOSFET is designed to minimize the on-state resistance (R ), yet maintain superior switching performance, DS(ON) making it ideal for high-efficiency power management applications. Mechanical Data Applications Case: TSOT26 DC-DC Converters Case Material: Molded Plastic, Green Molding Compound Power management functions UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.013 grams (Approximate) TSOT26 D 1 6 D D D 2 5 3 4 G S Equivalent Circuit Top View Top View Pin Configuration Ordering Information (Note 5) Part Number Case Packaging DMN3026LVTQ-7 TSOT26 3,000/Tape & Reel DMN3026LVTQ-13 TSOT26 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN3026LVTQ Marking Information N5L = Product Type Marking Code YM = Date Code Marking N5L Y = Year (ex: A = 2013) M = Month (ex: 9 = September) Date Code Key Year 2010 2014 2015 2016 2017 2018 2019 2020 2021 2022 Code X B C D E F G H I J Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 30 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C 6.6 A A I D State 5.3 T = +70C A Continuous Drain Current (Note 7) V = 10V GS T = +25C 8.5 A t<10s I A D 6.8 T = +70C A Maximum Body Diode Forward Current (Note 7) 3.0 A I S Pulsed Drain Current (10s pulse, duty cycle = 1%) I 35 A DM Thermal Characteristics Characteristic Symbol Value Units 1.2 T = +25C A Total Power Dissipation (Note 6) W P D 0.8 T = +70C A Steady state 100 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 60 C/W 1.5 T = +25C A Total Power Dissipation (Note 7) W P D 1.0 T = +70C A Steady state 83 C/W Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 50 C/W Thermal Resistance, Junction to Case (Note 7) R 14.5 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG 2 of 8 DMN3026LVTQ August 2015 Diodes Incorporated www.diodes.com Document number: DS38142 Rev. 1 - 2 ADVANCE INFORMATION ADVANCED INFORMATION YM