X-On Electronics has gained recognition as a prominent supplier of AUIRFS4310TRL MOSFETs across the USA, India, Europe, Australia, and various other global locations. AUIRFS4310TRL MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

AUIRFS4310TRL Infineon

AUIRFS4310TRL electronic component of Infineon
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Part No.AUIRFS4310TRL
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET AUTO 100V 1 N-CH HEXFET 7mOhms
Datasheet: AUIRFS4310TRL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
800: USD 4.6579 ea
Line Total: USD 3726.32 
Availability - 0
MOQ: 800  Multiples: 800
Pack Size: 800
Availability Price Quantity
0
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 800
Multiples : 800
800 : USD 4.6579
1600 : USD 3.9962
2400 : USD 3.7427

0
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 8.2127
10 : USD 5.3745

   
Manufacturer
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Package / Case
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Qualification
Configuration
Height
Length
Transistor Type
Width
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the AUIRFS4310TRL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AUIRFS4310TRL and other electronic components in the MOSFETs category and beyond.

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AUIRFS4310 AUTOMOTIVE GRADE AUIRFSL4310 HEXFET Power MOSFET Features V 100V DSS Advanced Process Technology R typ. 5.6m DS(on) Ultra Low On-Resistance max. 7.0m 175C Operating Temperature I 130A Fast Switching D (Silicon Limited) Repetitive Avalanche Allowed up to Tjmax I 75A D (Package Limited) Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed for Automotive applications, this HEXFET S S Power MOSFET utilizes the latest processing techniques to achieve D G G extremely low on-resistance per silicon area. Additional features of 2 D Pak TO-262 this design are a 175C junction operating temperature, fast AUIRFSL4310 AUIRFS4310 switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and G D S reliable device for use in Automotive applications and a wide variety of other applications Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRFSL4310 TO-262 Tube 50 AUIRFSL4310 Tube 50 AUIRFS4310 2 AUIRFS4310 D -Pak Tape and Reel Left 800 AUIRFS4310TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 130 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 92 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 75 D C GS Pulsed Drain Current 550 I DM P T = 25C Maximum Power Dissipation 300 W D C Linear Derating Factor 2.0 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 980 AS mJ I Avalanche Current See Fig.14,15, 22a, 22b A AR E Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery 14 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.50 JC C/W 2 R Junction-to-Ambient (PCB Mount), D Pak 40 JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-27 AUIRFS/SL4310 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.064 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 5.6 7.0 m V = 10V, I = 75A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 160 S V = 50V, I = 75A DS D R Gate Resistance 1.4 = 1.0MHz, open drain G 20 V = 100V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 100V,V = 0V,T =125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 170 250 I = 75A g D Q Gate-to-Source Charge 46 nC V = 80V gs DS Q Gate-to-Drain Charge 62 V = 10V GS gd t Turn-On Delay Time 26 V = 65V d(on) DD t Rise Time 110 I = 75A r D ns t Turn-Off Delay Time 68 R = 2.6 d(off) G t Fall Time 78 V = 10V f GS C Input Capacitance 7670 V = 0V iss GS C Output Capacitance 540 V = 50V oss DS C Reverse Transfer Capacitance 280 = 1.0MHz, See Fig. 5 rss pF Effective Output Capacitance (Energy Related) 650 V = 0V, V = 0V to 80V C oss eff.(ER) GS DS C Effective Output Capacitance (Time Related) 720.1 V = 0V, V = 0V to 80V oss eff.(TR) GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 130 S (Body Diode) showing the A integral reverse Pulsed Source Current I 550 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 75A,V = 0V SD J S GS 45 68 T = 25C V = 85V J DD t Reverse Recovery Time ns rr 55 83 T = 125C I = 75A, J F 82 120 T = 25C di/dt = 100A/s J Q Reverse Recovery Charge nC rr 120 180 T = 125C J I Reverse Recovery Current 3.3 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 75A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating pulse width limited by max. junction temperature. Limited by T starting T = 25C, L = 0.35mH, R = 25 , I = 75A, V =10V. Part not recommended for use above this value. Jmax, J G AS GS I 75A, di/dt 550A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C. J 2 2015-10-27

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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