SSM6P36FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36FE Power Management Switches 1.5-V drive Low ON-resistance: R = 3.60 (max) ( V = -1.5 V) Unit: mm on GS R = 2.70 (max) ( V = -1.8 V) on GS 1.60.05 R = 1.60 (max) ( V = -2.8 V) on GS R = 1.31 (max) ( V = -4.5 V) on GS 1.20.05 Absolute Maximum Ratings (Ta = 25 C) (Common to the Q1, Q2) 1 6 Characteristics Symbol Rating Unit 2 5 Drain-source voltage V -20 V DSS 3 4 Gate-source voltage V 8 V GSS DC I -330 D Drain current mA Pulse I -660 DP Drain power dissipation P (Note1) 150 mW D Channel temperature T 150 C ch 1.Source1 4.Source2 T 55 to 150 C Storage temperature range stg 2.Gate1 5.Gate2 Note: Using continuously under heavy loads (e.g. the application of high 3.Drain2 6.Drain1 ES6 temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating JEDEC temperature/current/voltage, etc.) are within the absolute maximum JEITA ratings. Please design the appropriate reliability upon reviewing the Toshiba TOSHIBA 2-2N1D Semiconductor Reliability Handbook (Handling Precautions/ Weight: 3.0 mg (typ.) Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on an FR4 board 2 6) (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 0.135 mm Marking Equivalent Circuit (top view) 6 5 4 65 4 Q1 PX Q2 1 2 3 12 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Usage Considerations Let V be the voltage applied between gate and source that causes the drain current (I ) to below (1 mA for the th D SSM6P36FE). Then, for normal switching operation, V must be higher than V and V must be lower than GS(on) th, GS(off) V This relationship can be expressed as: V < V < V th. GS(off) th GS(on). Start of commercial production Take this into consideration when using the device. 2008-06 1 2014-03-01 1.60.05 0.550.05 1.00.05 0.5 0.5 0.120.05 0.20.05SSM6P36FE Electrical Characteristics (Ta = 25C) (Q1, Q2 Common) Characteristics Symbol Test Conditions Min Typ. Max Unit V I = -1 mA, V = 0 V -20 (BR) DSS D GS Drain-source breakdown voltage V V I = -1 mA, V = 8 V -12 (BR) DSX D GS Drain cutoff current I V = -16 V, V = 0 V -10 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = -3 V, I = -1 mA -0.3 -1.0 V th DS D Forward transfer admittance Y V = -3 V, I = -100mA (Note2) 190 mS fs DS D I = -100mA, V = -4.5 V (Note2) 0.95 1.31 D GS I = -80mA, V = -2.8 V (Note2) 1.22 1.60 D GS Drain-source ON-resistance R DS (ON) I = -40mA, V = -1.8 V (Note2) 1.80 2.70 D GS I = -30mA, V = -1.5 V (Note2) 2.23 3.60 D GS Input capacitance C 43 iss Output capacitance C V = -10 V, V = 0 V, f = 1 MHz 10.3 pF DS GS oss Reverse transfer capacitance C 6.1 rss Total Gate Charge Q 1.2 g V = -10 V, I = -330mA DS DS GateSource Charge Q 0.85 nC gs V = -4 V GS GateDrain Charge Q 0.35 gd Turn-on time t 90 on V = -10 V, I = -100mA DD D Switching time ns V = 0 to -2.5 V, R = 50 GS G Turn-off time t 200 off Drain-source forward voltage V I =330mA, V = 0 V (Note2) 0.88 1.2 V DSF D GS Note2: Pulse test Switching Time Test Circuit (a) Test circuit (b) V IN 0 V OUT 10% 0 IN 90% 2.5V R 2.5 V L 10 s V DD (c) V V OUT DS (ON) 90% V = 10 V DD Duty 1% 10% V : t , t < 5 ns V IN r f DD t t r f (Z = 50 ) out Common Source t t on off Ta = 25C 2 2014-03-01 R G