SQ1539EH www.vishay.com Vishay Siliconix N-and P-Channel 30 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET N-CHANNEL P-CHANNEL AEC-Q101 qualified V (V) 30 -30 DS 100 % R and UIS tested g R () at V = 10 V 0.280 0.940 DS(on) GS Material categorization: R () at V = 4.5 V 0.380 1.800 DS(on) GS for definitions of compliance please see I (A) 0.85 -0.85 www.vishay.com/doc 99912 D Configuration N & P Pair D S 1 2 Package SC-70 SOT-363 SC-70 Dual (6 leads) S 2 4 G 2 G 2 G 1 5 D 1 6 S D 3 1 2 D 2 2 N-Channel MOSFET P-Channel MOSFET G 1 1 S 1 Top View Marking Code: 9R ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLN-CHANNELP-CHANNELUNIT Drain-Source Voltage V 30 -30 DS V Gate-Source Voltage V 20 GS T = 25 C 0.85 -0.85 C c Continuous Drain Current I D T = 125 C 0.85 -0.56 C Continuous Source Current (Diode Conduction) I 0.85 -0.85 S A a Pulsed Drain Current I 3.3 -3.3 DM Single Pulse Avalanche Current I 3.5 -1.9 AS L = 0.1 mH Single Pulse Avalanche Energy E 0.6 0.2 mJ AS T = 25 C 1.5 1.5 C a Maximum Power Dissipation P W D T = 125 C 0.5 0.5 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLN-CHANNELP-CHANNELUNIT b Junction-to-Ambient PCB Mount R 220 220 thJA C/W Junction-to-Foot (Drain) R 100 100 thJF Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. When mounted on 1 square PCB (FR4 material). c. Package limited. S15-1925-Rev. A, 17-Aug-15 Document Number: 62993 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQ1539EH www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static V = 0 V, I = 250 A N-Ch 30 - - GS D Drain-Source Breakdown Voltage V DS V = 0 V, I = -250 A P-Ch -30 - - GS D V V = V , I = 250 A N-Ch 1 1.8 2.6 DS GS D Gate-Source Threshold Voltage V GS(th) V = V , I = -250 A P-Ch -1 -1.8 -2.6 DS GS D N-Ch - - 100 Gate-Source Leakage I V = 0 V, V = 20 V nA GSS DS GS P-Ch - - 100 V = 0 V V = 30 V N-Ch - - 1 GS DS V = 0 V V = -30 V P-Ch - - -1 GS DS V = 0 V V = 30 V, T = 125 C N-Ch - - 50 GS DS J Zero Gate Voltage Drain Current I A DSS V = 0 V V = -30 V, T = 125 C P-Ch - - -50 GS DS J V = 0 V V = 30 V, T = 175 C N-Ch - - 150 GS DS J V = 0 V V = -30 V, T = 175 C P-Ch - - -150 GS DS J V = 10 V V = 5 V N-Ch 2 - - GS DS a On-State Drain Current I A D(on) V = -10 V V = -5 V P-Ch -0.5 - - GS DS V = 10 V I = 1 A N-Ch - 0.210 0.280 GS D V = -10 V I = -0.5 A P-Ch - 0.788 0.940 GS D a Drain-Source On-State Resistance R DS(on) V = 4.5 V I = 0.1 A N-Ch - 0.290 0.380 GS D V = -4.5 V I = -0.1 A P-Ch - 1.400 1.800 GS D V = 15 V, I = 0.7 A N-Ch - 1.2 - DS D b Forward Transconductance g S fs V = -15 V, I = -0.5 A P-Ch - 0.6 - DS D b Dynamic V = 0 V V = 15 V, f = 1 MHz N-Ch - 38 48 GS DS Input Capacitance C iss V = 0 V V = -15 V, f = 1 MHz P-Ch - 40 50 GS DS V = 0 V V = 15 V, f = 1 MHz N-Ch - 14 21 GS DS Output Capacitance C pF oss V = 0 V V = -15 V, f = 1 MHz P-Ch - 14 21 GS DS V = 0 V V = 15 V, f = 1 MHz N-Ch - 6 10 GS DS Reverse Transfer Capacitance C rss V = 0 V V = -15 V, f = 1 MHz P-Ch - 5 9 GS DS V = 4.5 V V = 15 V, I = 0.7 A N-Ch - 1 1.4 GS DS D Total Gate Charge Q g V = -4.5 V V = -15 V, I = -0.5 A P-Ch - 1.2 1.6 GS DS D V = 4.5 V V = 15 V, I = 0.7 A N-Ch - 0.2 - nC GS DS D Gate-Source Charge Q gs V = -4.5 V V = -15 V, I = -0.5 A P-Ch - 0.3 - GS DS D V = 4.5 V V = 15 V, I = 0.7 A N-Ch - 0.4 - GS DS D c Gate-Drain Charge Q gd V = -4.5 V V = -15 V, I = -0.5 A P-Ch - 0.6 - GS DS D N-Ch 5.8 - 17.3 Gate Resistance R f = 1 MHz g P-Ch 3.7 - 11.1 V = 15 V, R = 20 DD L N-Ch - 3 6 I 0.7 A, V = 4.5 V, R = 1 D GEN g Turn-On Delay Time t d(on) V = -15 V, R = 20 DD L P-Ch - 4 8 I -0.5 A, V = -4.5 V, R = 1 D GEN g V = 15 V, R = 20 DD L N-Ch - 18 28 I 0.7 A, V = 4.5 V, R = 1 D GEN g Rise Time t r V = -15 V, R = 20 DD L P-Ch - 39 50 I -0.5 A, V = -4.5 V, R = 1 D GEN g ns V = 15 V, R = 20 DD L N-Ch - 8 14 I 0.7 A, V = 4.5 V, R = 1 D GEN g Turn-Off Delay Time t d(off) V = -15 V, R = 20 DD L P-Ch - 10 16 I -0.5 A, V = -4.5 V, R = 1 D GEN g V = 15 V, R = 20 DD L N-Ch - 32 46 I 0.7 A, V = 4.5 V, R = 1 D GEN g Fall Time t f V = -15 V, R = 20 DD L P-Ch - 17 25 I -0.5 A, V = -4.5 V, R = 1 D GEN g S15-1925-Rev. A, 17-Aug-15 Document Number: 62993 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000