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X-On Electronics has gained recognition as a prominent supplier of NVMFS5C670NLAFT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVMFS5C670NLAFT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVMFS5C670NLAFT1G ON Semiconductor

NVMFS5C670NLAFT1G electronic component of ON Semiconductor
NVMFS5C670NLAFT1G ON Semiconductor
NVMFS5C670NLAFT1G MOSFETs
NVMFS5C670NLAFT1G  Semiconductors

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See Product Specifications
Part No. NVMFS5C670NLAFT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET TRENCH 6 60V NFET
Datasheet: NVMFS5C670NLAFT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1500: USD 1.1292 ea
Line Total: USD 1693.8 
Availability - 0
MOQ: 1500  Multiples: 1500
Pack Size: 1500
Availability Price Quantity
0
Ship by Thu. 06 Mar to Wed. 12 Mar
MOQ : 1500
Multiples : 1500
1500 : USD 1.1292
3000 : USD 1.118
6000 : USD 1.1067
9000 : USD 1.0957
12000 : USD 1.0848
15000 : USD 1.0842
24000 : USD 1.0734
30000 : USD 1.0626
75000 : USD 1.052

0
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 2.557
10 : USD 0.9568
100 : USD 0.716
500 : USD 0.5916
1000 : USD 0.4673

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NVMFS5C670NLAFT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVMFS5C670NLAFT1G and other electronic components in the MOSFETs category and beyond.

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NVMFS5C670NL MOSFET Power, Single N-Channel 60 V, 6.1 m , 71 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(ON) D NVMFS5C670NLWF Wettable Flank Option for Enhanced Optical 6.1 m 10 V Inspection 60 V 71 A AECQ101 Qualified and PPAP Capable 8.8 m 4.5 V These Devices are PbFree and are RoHS Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) J D (5,6) Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS GatetoSource Voltage V 20 V GS G (4) Continuous Drain T = 25C I 71 A C D Current R JC T = 100C 50 (Notes 1, 3) C Steady S (1,2,3) State Power Dissipation T = 25C P 61 W D C NCHANNEL MOSFET R (Note 1) JC T = 100C 31 C Continuous Drain T = 25C I 17 A A D Current R JA MARKING T = 100C 12 (Notes 1, 2, 3) A Steady DIAGRAM State Power Dissipation T = 25C P 3.6 W A D D 1 R (Notes 1 & 2) JA T = 100C 1.8 S D A XXXXXX DFN5 S Pulsed Drain Current T = 25C, t = 10 s I 440 A A p DM AYWZZ (SO8FL) S Operating Junction and Storage Temperature T , T 55 to C CASE 488AA J stg G D + 175 STYLE 1 D Source Current (Body Diode) I 68 A S XXXXXX = 5C670L XXXXXX = (NVMFS5C670NL) or Single Pulse DraintoSource Avalanche E 166 mJ AS Energy (I = 3.6 A) XXXXXX = 670LWF L(pk) XXXXXX = (NVMFS5C670NLWF) Lead Temperature for Soldering Purposes T 260 C L A = Assembly Location (1/8 from case for 10 s) Y = Year Stresses exceeding those listed in the Maximum Ratings table may damage the W = Work Week device. If any of these limits are exceeded, device functionality should not be ZZ = Lot Traceability assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS ORDERING INFORMATION Parameter Symbol Value Unit See detailed ordering, marking and shipping information on C/W JunctiontoCase Steady State R 2.4 JC page 5 of this data sheet. JunctiontoAmbient Steady State (Note 2) R 41 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2019 Rev. 3 NVMFS5C670NL/DNVMFS5C670NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 27 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 DSS GS J V = 60 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 53 A 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 4.7 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 35 A 5.1 6.1 DS(on) GS D m V = 4.5 V I = 35 A 7.0 8.8 GS D Forward Transconductance g V = 15 V, I = 35 A 82 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1400 ISS Output Capacitance C 690 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 15 RSS Total Gate Charge Q V = 4.5 V, V = 48 V I = 35 A 9.0 nC G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 48 V I = 35 A 20 nC G(TOT) GS DS D Threshold Gate Charge Q 2.5 G(TH) GatetoSource Charge Q 4.5 nC GS V = 10 V, V = 48 V I = 35 A GS DS D GatetoDrain Charge Q 2.0 GD Plateau Voltage V 3.1 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 11 d(ON) Rise Time t 60 r V = 4.5 V, V = 48 V, GS DS ns I = 35 A, R = 2.5 D G TurnOff Delay Time t 15 d(OFF) Fall Time t 4 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.9 1.2 SD J V = 0 V, GS V I = 35 A S T = 125C 0.8 J Reverse Recovery Time t 34 RR Charge Time t 17 ns a V = 0 V, dI /d = 100 A/ s, GS S t I = 35 A S Discharge Time t 17 b Reverse Recovery Charge Q 19 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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