HEXFET Power MOSFET V 100 V DS TOP VIEW V V gs max 20 R D D D D DS(on) max 195 m 7 6 5 8 ( V = 10V) GS Q g typ 4.2 nC I D 3.4 A 132 4 ( T = 25C) c(Bottom) PQFN Dual 3.3X3.3 mm S G S G Applications DC-DC Primary Switch 48V Battery Monitoring Features and Benefits Features Benefits Low RDSon (<195m) Lower Conduction Losses Low Thermal Resistance to PCB (< 12C/W) Enable better thermal dissipation Low Profile (<1.2mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Orderable part number Package Type Note Form Quantity IRFHM792TRPBF PQFN Dual 3.3mm x 3.3mm Tape and Reel 4000 IRFHM792TR2PBF PQFN Dual 3.3mm x 3.3mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 100 DS V V Gate-to-Source Voltage 20 GS Continuous Drain Current, V 10V I T = 25C 2.3 D A GS I T = 70C Continuous Drain Current, V 10V 1.8 A GS D I T = 25C Continuous Drain Current, V 10V 4.8 GS D C(Bottom) A Continuous Drain Current, V 10V I T = 100C 3.1 D C(Bottom) GS I T = 25C Continuous Drain Current, V 10V (Wirebond Limited) 3.4 C GS D Pulsed Drain Current 14 I DM Power Dissipation P T = 25C 2.3 A D W Power Dissipation P T = 25C 10.4 C(Bottom) D Linear Derating Factor 0.018 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250 A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.11 V/C Reference to 25C, I = 1.0mA DSS J D R Static Drain-to-Source On-Resistance 164 195 V = 10V, I = 2.9A DS(on) m GS D V V = V , I = 10 A GS(th) Gate Threshold Voltage 2.0 3.0 4.0 V DS GS D V GS(th) Gate Threshold Voltage Coefficient -8.2 mV/C I DSS Drain-to-Source Leakage Current 20 A V = 100V, V = 0V DS GS 250 mA V = 100V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 3.5 S V = 50V, I = 2.9A DS D Q Total Gate Charge 4.2 6.3 g Q Pre-Vth Gate-to-Source Charge 0.7 V = 50V gs1 DS Q Post-Vth Gate-to-Source Charge 0.3 V = 10V gs2 GS nC Q Gate-to-Drain Charge 1.3 I = 2.9A gd D Q Gate Charge Overdrive 1.9 godr Q Switch Charge (Q + Q ) 1.6 sw gs2 gd Q Output Charge 6.7 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.6 G t Turn-On Delay Time 3.4 V = 50V, V = 10V d(on) DD GS t Rise Time 4.7 I = 2.9A r D ns t Turn-Off Delay Time 5.2 R =1.8 d(off) G t Fall Time 2.6 f C Input Capacitance V = 0V iss 251 GS C Output Capacitance pF V = 25V oss 31 DS C Reverse Transfer Capacitance = 1.0MHz rss 13 Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 10.2 mJ Avalanche Current I AR 2.9 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current MOSFET symbol S 3.4 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 14 S p-n junction diode. (Body Diode) V Diode Forward Voltage 1.3 V T = 25C, I = 2.9A, V = 0V SD J S GS t Reverse Recovery Time 15 23 ns T = 25C, I = 2.9A, V = 50V rr DD J F Q Reverse Recovery Charge 45 68 nC di/dt = 500A/s rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 12 JC Junction-to-Case R (Top) 85 C/W JC Junction-to-Ambient R 55 JA Junction-to-Ambient R (<10s) 38 JA