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X-On Electronics has gained recognition as a prominent supplier of TK160F10N1L,LQ MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK160F10N1L,LQ MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK160F10N1L,LQ Toshiba

TK160F10N1L,LQ electronic component of Toshiba
TK160F10N1L,LQ Toshiba
TK160F10N1L,LQ MOSFETs
TK160F10N1L,LQ  Semiconductors

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See Product Specifications
Part No. TK160F10N1L,LQ
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET U-MOSVIII-H 100V 160A 122nC MOSFET
Datasheet: TK160F10N1L,LQ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 2.7654 ea
Line Total: USD 2765.4 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Tue. 14 Jan to Mon. 20 Jan
MOQ : 1000
Multiples : 1000
1000 : USD 2.7654
2000 : USD 2.7491
3000 : USD 2.734
4000 : USD 2.7176
5000 : USD 2.7013
10000 : USD 2.6849
20000 : USD 2.6685
25000 : USD 2.6522
50000 : USD 2.6345

0
Ship by Fri. 10 Jan to Tue. 14 Jan
MOQ : 1
Multiples : 1
1 : USD 7.5206
10 : USD 2.7074
25 : USD 2.557
100 : USD 2.1759
500 : USD 1.7949
1000 : USD 1.474
2000 : USD 1.3436
5000 : USD 1.2935

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TK160F10N1L,LQ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK160F10N1L,LQ and other electronic components in the MOSFETs category and beyond.

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TK160F10N1L MOSFETs Silicon N-channel MOS (U-MOS-H) TK160F10N1LTK160F10N1LTK160F10N1LTK160F10N1L 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) AEC-Q101 qualified (2) Low drain-source on-resistance: R = 2.0 m (typ.) (V = 10 V) DS(ON) GS (3) Low leakage current: I = 10 A (max) (V = 100 V) DSS DS (4) Enhancement mode: V = 2.5 to 3.5 V (V = 10 V, I = 1 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) Start of commercial production 2016-04 2016-2020 2020-06-24 1 Toshiba Electronic Devices & Storage Corporation Rev.6.0TK160F10N1L 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 100 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 160 A D Drain current (pulsed) (Note 1) I 480 DP Power dissipation (T = 25 ) (Note 2) P 375 W c D Single-pulse avalanche energy (Note 3) E 466 mJ AS Single-pulse avalanche current I 160 A AS Channel temperature (Note 4) T 175 ch Storage temperature (Note 4) T -55 to 175 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2016-2020 2020-06-24 2 Toshiba Electronic Devices & Storage Corporation Rev.6.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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