X-On Electronics has gained recognition as a prominent supplier of TK160F10N1L,LQ MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK160F10N1L,LQ MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK160F10N1L,LQ Toshiba

Name: TK160F10N1L,LQ
Brand: Toshiba
SKU: TK160F10N1LLQ_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

TK160F10N1L,LQ electronic component of Toshiba

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Part No.	TK160F10N1L,LQ
Manufacturer:	Toshiba
Category:	MOSFETs
Description:	MOSFET U-MOSVIII-H 100V 160A 122nC MOSFET
Datasheet:	TK160F10N1L,LQ Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1000: USD 2.7462 ea
Line Total: USD 2746.2

Availability - 0

MOQ: 1000 Multiples: 1000
Pack Size: 1000

TK160F10N1L,LQ More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 14 Feb to Thu. 20 Feb MOQ : 1000 Multiples : 1000	1000 : USD 2.7462 2000 : USD 2.73 3000 : USD 2.715 4000 : USD 2.6988 5000 : USD 2.6825 10000 : USD 2.6662 20000 : USD 2.65 25000 : USD 2.6337 50000 : USD 2.6162

0 Ship by Wed. 12 Feb to Fri. 14 Feb MOQ : 1 Multiples : 1	1 : USD 7.5206 10 : USD 2.7074 25 : USD 2.557 100 : USD 2.1759 500 : USD 1.7949 1000 : USD 1.474 2000 : USD 1.3436 5000 : USD 1.2935

We are delighted to provide the TK160F10N1L,LQ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK160F10N1L,LQ and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

TK160F10N1L MOSFETs Silicon N-channel MOS (U-MOS-H) TK160F10N1LTK160F10N1LTK160F10N1LTK160F10N1L 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) AEC-Q101 qualified (2) Low drain-source on-resistance: R = 2.0 m (typ.) (V = 10 V) DS(ON) GS (3) Low leakage current: I = 10 A (max) (V = 100 V) DSS DS (4) Enhancement mode: V = 2.5 to 3.5 V (V = 10 V, I = 1 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) Start of commercial production 2016-04 2016-2020 2020-06-24 1 Toshiba Electronic Devices & Storage Corporation Rev.6.0TK160F10N1L 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 100 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Note 1) I 160 A D Drain current (pulsed) (Note 1) I 480 DP Power dissipation (T = 25 ) (Note 2) P 375 W c D Single-pulse avalanche energy (Note 3) E 466 mJ AS Single-pulse avalanche current I 160 A AS Channel temperature (Note 4) T 175 ch Storage temperature (Note 4) T -55 to 175 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2016-2020 2020-06-24 2 Toshiba Electronic Devices & Storage Corporation Rev.6.0

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer Toshiba Toshiba
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 160 A 160 A
Vds - Drain-Source Breakdown Voltage 100 V 100 V
Rds On - Drain-Source Resistance 2 mOhms 2 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 2.5 V 2.5 V
Minimum Operating Temperature - -
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 375 W 375 W
Mounting Style Smd/Smt Smd/Smt
Package / Case TO - 220SMW - 3 TO - 220SMW - 3
Packaging Cut Tape Cut Tape
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 20 V 20 V
Qg - Gate Charge 122 nC 122 nC
Channel Mode Enhancement Enhancement
Configuration Single Single
Series Tk160f10n1l Tk160f10n1l
Transistor Type 1 N - Channel 1 N - Channel
Brand Toshiba Toshiba
Fall Time 40 ns 40 ns
Product Type Mosfet Mosfet
Rise Time 22 ns 22 ns
Factory Pack Quantity : 1000 1000
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 140 ns 140 ns
Typical Turn-On Delay Time 42 ns 42 ns
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999