DirectFET Power MOSFET RoHS Compliant and Halogen Free Low Profile (<0.7 mm) V V R R Dual Sided Cooling Compatible DSS GS DS(on) DS(on) Ultra Low Package Inductance 30V max 20V max 1.7m 10V 2.4m 4.5V Optimized for High Frequency Switching Q Q Q Q Q V g tot gd gs2 rr oss gs(th) Ideal for CPU Core DC-DC Converters 28nC 7.9nC 4.2nC 39nC 21nC 1.8V Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP Description The IRF8304MPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF8304MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF8304MPbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses. Base Part number Package Type Standard Pack Orderable Part Number Form Quantity IRF8304MPbF DirectFET MX Tape and Reel 4800 IRF8304MTRPbF Absolute Maximum Ratings Max. Parameter Units V Drain-to-Source Voltage 30 V DS 20 V Gate-to-Source Voltage GS Continuous Drain Current, V 10V 28 I T = 25C GS D A I T = 70C Continuous Drain Current, V 10V 22 A GS D A Continuous Drain Current, V 10V 170 I T = 25C C GS D I Pulsed Drain Current 220 DM E 190 Single Pulse Avalanche Energy mJ AS I 22 AR Avalanche Current A 6 14.0 I = 28A I = 22A D D 12.0 V = 24V 5 DS V = 15V 10.0 DS 4 V = 6.0V DS 8.0 3 6.0 T = 125C J 2 4.0 1 T = 25C 2.0 J 0 0.0 0 5 10 15 20 0 102030 40506070 80 Q Total Gate Charge (nC) G V Gate -to -Source Voltage (V) GS, Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage T measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Starting T = 25C, L = 0.75mH, R = 25, I = 22A. Surface mounted on 1 in. square Cu board, steady state. J G AS Typical R (m) DS(on) V , Gate-to-Source Voltag e (V) GS Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250A BV Drain-to-Source Breakdown Voltage 30 V GS D DSS Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 22 mV/C D DSS J V = 10V, I = 28A R Static Drain-to-Source On-Resistance 1.7 2.2 m GS D DS(on) V = 4.5V, I = 22A 2.4 3.2 GS D V = V , I = 100A V Gate Threshold Voltage 1.35 1.8 2.35 V DS GS D GS(th) V /T Gate Threshold Voltage Coefficient -6.1 mV/C GS(th) J = 24V, V = 0V I V Drain-to-Source Leakage Current 1.0 A DS GS DSS V = 24V, V = 0V, T = 125C 150 DS GS J I V = 20V Gate-to-Source Forward Leakage 100 nA GSS GS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 15V, I = 22A gfs Forward Transconductance 150 S DS D Q Total Gate Charge 28 42 g Q V = 15V Pre-Vth Gate-to-Source Charge 8.3 gs1 DS V = 4.5V Q Post-Vth Gate-to-Source Charge 4.2 nC GS gs2 Q I = 22A Gate-to-Drain Charge 7.9 gd D Q Gate Charge Overdrive 7.6 See Fig. 15 godr Q Switch Charge (Q + Q ) 12.1 sw gs2 gd Q Output Charge 21 nC V = 16V, V = 0V DS GS oss R Gate Resistance 1.3 2.2 G t V = 15V, V = 4.5V Turn-On Delay Time 16 d(on) DD GS I = 22A t Rise Time 22 ns r D t R = 1.8 Turn-Off Delay Time 19 d(off) G t Fall Time 13 See Fig. 17 f C V = 0V Input Capacitance 4700 iss GS V = 15V C Output Capacitance 960 pF DS oss C = 1.0MHz Reverse Transfer Capacitance 420 rss Diode Characteristics Conditions Parameter Min. Typ. Max. Units I Continuous Source Current 130 MOSFET symbol S showing the (Body Diode) A I Pulsed Source Current 220 integral reverse SM p-n junction diode. (Body Diode) T = 25C, I = 22A, V = 0V V Diode Forward Voltage 0.77 1.0 V J S GS SD t T = 25C, I = 22A Reverse Recovery Time 24 36 ns J F rr Q Reverse Recovery Charge 39 59 nC di/dt = 260A/s rr Pulse width 400s duty cycle 2%.