IRF6810STRPbF IRF6810STR1PbF DirectFET Power MOSFET RoHS Compliant and Halogen Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible V V R R DSS GS DS(on) DS(on) Ultra Low Package Inductance 25V max 16V max 4.0m 10V 5.6m 4.5V Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Q Q Q Q Q V g tot gd gs2 rr oss gs(th) Optimized for Control FET Application 7.4nC 2.7nC 0.98nC 12nC 8.9nC 1.6V Compatible with existing Surface Mount Techniques 100% Rg tested Footprint compatible to DirectFET S D D G DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline S1 S2 SB M2 M4 L4 L6 L8 Description TM The IRF6810STRPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6810STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6810STRPbF has been optimized for the control FET socket of synchronous buck operating from 12 volt bus converters. Absolute Maximum Ratings Max. Parameter Units V Drain-to-Source Voltage 25 DS V V Gate-to-Source Voltage 16 GS Continuous Drain Current, V 10V 16 I T = 25C GS A D I T = 70C Continuous Drain Current, V 10V 13 GS D A A Continuous Drain Current, V 10V 50 I T = 25C C GS D 130 I Pulsed Drain Current DM E Single Pulse Avalanche Energy 51 mJ AS I 13 Avalanche Current A AR 15 14.0 I = 13A I = 16A D D 12.0 V = 20V DS V = 13V 10.0 10 DS VDS= 5V 8.0 T = 125C J 6.0 5 4.0 T = 25C J 2.0 0 0.0 0 2 4 6 8 10 12 14 16 0 5 10 15 20 V Gate -to -Source Voltage (V) Q Total Gate Charge (nC) G GS, Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage T measured with thermocouple mounted to top (Drain) of part. Click on this section to link to the appropriate technical paper. C Repetitive rating pulse width limited by max. junction temperature. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. Starting T = 25C, L = 0.601mH, R = 50, I = 13A. J G AS www.irf.com 1 08/08/11 pical R (m Ty ) DS(o ) n V , Gate-to-Source Voltage (V) GS Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V = 0V, I = 250 A BV Drain-to-Source Breakdown Voltage 25 V GS D DSS Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 22 mV/C D DSS J V = 10V, I = 16A R Static Drain-to-Source On-Resistance 4.0 5.2 GS D DS(on) m V = 4.5V, I = 13A 5.6 7.3 GS D V Gate Threshold Voltage 1.1 1.6 2.1 V GS(th) V = V , I = 25 A DS GS D V /T Gate Threshold Voltage Coefficient -5.9 mV/C GS(th) J V = 20V, V = 0V I Drain-to-Source Leakage Current 1.0 DS GS DSS A V = 20V, V = 0V, T = 125C 150 DS GS J V = 16V I Gate-to-Source Forward Leakage 100 GS GSS nA V = -16V Gate-to-Source Reverse Leakage -100 GS V = 13V, I =13A gfs Forward Transconductance 182 S DS D Q Total Gate Charge 7.4 11 g Q V = 13V Pre-Vth Gate-to-Source Charge 1.6 gs1 DS V = 4.5V Q Post-Vth Gate-to-Source Charge 0.98 GS gs2 nC Q I = 13A Gate-to-Drain Charge 2.7 D gd Q Gate Charge Overdrive 2.1 See Fig. 15 godr Q Switch Charge (Q + Q ) 3.68 sw gs2 gd V = 16V, V = 0V Q Output Charge 8.9 nC DS GS oss R Gate Resistance 0.4 G = 13V, V = 4.5V t Turn-On Delay Time 8.2 V DD GS d(on) t I = 13A Rise Time 22 r D ns t R = 1.8 Turn-Off Delay Time 11 d(off) G t Fall Time 4.8 f = 0V C V Input Capacitance 1038 GS iss V = 13V C Output Capacitance 325 pF DS oss C = 1.0MHz Reverse Transfer Capacitance 74 rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I MOSFET symbol D Continuous Source Current S 16 (Body Diode) A showing the G I Pulsed Source Current integral reverse SM 130 S (Body Diode) p-n junction diode. V T = 25C, I = 13A, V = 0V Diode Forward Voltage 1.0 V SD J S GS T = 25C, I =13A t Reverse Recovery Time 12 18 ns J F rr Q Reverse Recovery Charge 8.4 13 nC di/dt = 280A/ s rr Pulse width 400s duty cycle 2%. 2 www.irf.com