X-On Electronics has gained recognition as a prominent supplier of TK16E60W,S1VX MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK16E60W,S1VX MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK16E60W,S1VX Toshiba

TK16E60W,S1VX electronic component of Toshiba
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Part No.TK16E60W,S1VX
Manufacturer: Toshiba
Category: MOSFETs
Description: Toshiba MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC
Datasheet: TK16E60W,S1VX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.7642 ea
Line Total: USD 6.76 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 50
Multiples : 1
50 : USD 2.2816
100 : USD 2.2718
250 : USD 2.2618
500 : USD 2.2516
1000 : USD 2.2415
2500 : USD 2.2312
3000 : USD 2.2207
5000 : USD 2.2101
10000 : USD 2.1995

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 3.575
10 : USD 3.0828
100 : USD 2.478
500 : USD 2.036
1000 : USD 1.687
2000 : USD 1.5706
5000 : USD 1.5124

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 6.7642
10 : USD 2.4371
50 : USD 2.2879
100 : USD 1.9497
500 : USD 1.6015
1000 : USD 1.323
2500 : USD 1.2036
5000 : USD 1.1639

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 4
Multiples : 1
4 : USD 2.0922
10 : USD 1.9475

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
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Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TK16E60W,S1VX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK16E60W,S1VX and other electronic components in the MOSFETs category and beyond.

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TK16E60W MOSFETs Silicon N-Channel MOS (DTMOS) TK16E60WTK16E60WTK16E60WTK16E60W 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low drain-source on-resistance: R = 0.16 (typ.) DS(ON) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: V = 2.7 to 3.7 V (V = 10 V, I = 0.79 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specified) 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specified) aa aa Characteristics Symbol Rating Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 15.8 A D Drain current (pulsed) (Note 1) I 63.2 DP Power dissipation (T = 25) P 130 W c D Single-pulse avalanche energy (Note 2) E 194 mJ AS Avalanche current I 4.0 A AR Reverse drain current (DC) (Note 1) I 15.8 DR Reverse drain current (pulsed) (Note 1) I 63.2 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Mounting torque TOR 0.6 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2012-09 2013-12-25 1 Rev.3.0TK16E60W 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 0.962 /W th(ch-c) Channel-to-ambient thermal resistance R 83.3 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 21.2 mH, R = 25 , I = 4.0 A DD ch G AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2013-12-25 2 Rev.3.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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