X-On Electronics has gained recognition as a prominent supplier of FCD380N60E MOSFET across the USA, India, Europe, Australia, and various other global locations. FCD380N60E MOSFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

FCD380N60E ON Semiconductor

FCD380N60E electronic component of ON Semiconductor
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See Product Specifications
Part No.FCD380N60E
Manufacturer: ON Semiconductor
Category: MOSFET
Description: Fairchild Semiconductor MOSFET 600V N-Channel MOSFET
Datasheet: FCD380N60E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

345: USD 0.9161 ea
Line Total: USD 316.05

Availability - 0
MOQ: 345  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 2500
Multiples : 2500
2500 : USD 1.4165

0
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 3.1016
10 : USD 2.6692
100 : USD 2.1454
500 : USD 1.7627
1000 : USD 1.4605

0
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 1
Multiples : 1
1 : USD 3.1016
10 : USD 2.6692
100 : USD 2.1454
500 : USD 1.7627
1000 : USD 1.4605

0
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 2500
Multiples : 2500
2500 : USD 1.4

0
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 345
Multiples : 1
345 : USD 0.9161

0
Ship by Fri. 09 Aug to Wed. 14 Aug
MOQ : 1
Multiples : 1
1 : USD 2.2224
10 : USD 1.9167
30 : USD 1.7253
100 : USD 1.5284
500 : USD 1.4403
1000 : USD 1.4029

0
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ : 1
Multiples : 1
1 : USD 5.7736
10 : USD 2.0919
25 : USD 1.9677
100 : USD 1.6777
500 : USD 1.3774
1000 : USD 1.1496
2500 : USD 1.1081

0
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 2500
Multiples : 2500
2500 : USD 1.9321

0
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 7
Multiples : 1
7 : USD 1.7181
10 : USD 1.4244
25 : USD 1.4093
100 : USD 1.1476
250 : USD 1.1246

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
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Maximum Operating Temperature
Pd - Power Dissipation
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
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Series
Brand
Forward Transconductance - Min
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Rise Time
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Typical Turn-Off Delay Time
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We are delighted to provide the FCD380N60E from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FCD380N60E and other electronic components in the MOSFET category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FCD380N60E N-Channel SuperFET II Easy-Drive MOSFET December 2013 FCD380N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 10.2 A, 380 m Features Description 650 V T = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new J high voltage super-junction (SJ) MOSFET family that is utilizing Typ. R = 320 m DS(on) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Q = 34 nC) g and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching perfor- Low Effective Output Capacitance (Typ. C = 97 pF) oss(eff.) mance, dv/dt rate and higher avalanche energy. Consequently, 100% Avalanche Tested SuperFET II MOSFET easy-drive series offers slightly slower An Integrated Gate Resistor rise and fall times compared to the SuperFET II MOSFET series. Noted by the part number suffix, this family helps RoHS Compliant manage EMI issues and allows for easier design implementa- tion. For faster switching in applications where switching losses must be at an absolute minimum, please consider the Super- FET II MOSFET series. D D G G S D-PAK S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCD380N60E Unit V Drain to Source Voltage 600 V DSS - DC 20 V V Gate to Source Voltage GSS - AC (f > 1 Hz) 30 V o - Continuous (T = 25 C) 10.2 C I Drain Current A D o - Continuous (T = 100 C) 6.4 C I Drain Current - Pulsed (Note 1) 30.6 A DM E Single Pulsed Avalanche Energy (Note 2) 211.6 mJ AS I Avalanche Current (Note 1) 2.3 A AR E Repetitive Avalanche Energy (Note 1) 1.06 mJ AR MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 20 o (T = 25 C) 106 W C P Power Dissipation D o o - Derate Above 25C0.85W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Thermal Characteristics Symbol Parameter Unit FCD380N60E R Thermal Resistance, Junction to Case, Max. 1.18 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 100 JA 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCD380N60E Rev. C2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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