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FCD600N60Z N-Channel SuperFET II MOSFET November 2013 FCD600N60Z N-Channel SuperFET II MOSFET 600 V, 7.4 A, 600 m Features Description 650 V T = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new J high voltage super-junction (SJ) MOSFET family that is utilizing Typ. R = 510 m DS(on) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Q = 20 nC) g and lower gate charge performance. This technology is tailored Low Effective Output Capacitance (Typ. C = 74 pF) to minimize conduction loss, provide superior switching perfor- oss(eff.) mance, dv/dt rate and higher avalanche energy. Consequently, 100% Avalanche Tested SuperFET II MOSFET is very suitable for the switching power ESD Improved Capacity applications such as PFC, server/telecom power, FPD TV RoHS Compliant power, ATX power and industrial power applications. Applications LCD / LED / PDP TV and Monitor Lighting Solar Inverter AC-DC Power Supply D D G G S D-PAK S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCD600N60Z Unit V Drain to Source Voltage 600 V DSS - DC 20 V V Gate to Source Voltage GSS - AC (f > 1 Hz) 30 V o - Continuous (T = 25 C) 7.4 C I Drain Current A D o - Continuous (T = 100 C) 4.7 C I Drain Current - Pulsed (Note 1) 22.2 A DM E Single Pulsed Avalanche Energy (Note 2) 135 mJ AS I Avalanche Current (Note 1) 1.5 A AR E Repetitive Avalanche Energy (Note 1) 0.89 mJ AR MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 20 o (T = 25 C) 89 W C P Power Dissipation D o o - Derate Above 25C0.71W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Thermal Characteristics Symbol Parameter Unit FCD600N60Z R Thermal Resistance, Junction to Case, Max. 1.4 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 100 JA 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCD600N60Z Rev. C3