FCH043N60 ON Semiconductor

MOSFET N-Channel, SUPERFET II 600 V, 75 A, 43 m FCH043N60 Description SUPERFET II MOSFET is ON Semiconductors brand new high www.onsemi.com voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This advanced technology is tailored to minimize V R MAX I MAX DS DS(ON) D conduction loss, provide superior switching performance, and 600 V 43 m 10 V 75 A withstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency. D Features Typ. R = 37 m DS(on) 600 V T = 150C J Ultra Low Gate Charge (Typ. Q = 163 nC) G g Low Effective Output Capacitance (Typ. C = 730 pF) oss(eff.) 100% Avalanche Tested S These Devices are PbFree and are RoHS Compliant N-CHANNEL MOSFET Applications Telecom / Sever Power Supplies S D GG Industrial Power Supplies TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FCH 043N60 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCH043N60 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2019 Rev. 3 FCH043N60/DFCH043N60 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter FCH043N60 Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage DC 20 V GSS AC (f > 1 Hz) 30 I Drain Current: Continuous (T = 25C) 75 A D C Continuous (T = 100C) 47.5 C I Drain Current: Pulsed (Note 1) 225 A DM E Single Pulsed Avalanche Energy (Note 2) 2025 mJ AS I Avalanche Current (Note 1) 15 A AR E Repetitive Avalanche Energy (Note 1) 5.92 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 592 W D C Derate Above 25C 4.74 W/C T , T Operating and Storage Temperature Range 55 to + 150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 15 A, R = 25 , Starting T = 25 C. AS G J 3. I 38 A, di/dt 200 A/ s, V 380 V, Starting T = 25 C. SD DD J PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCH043N60 FCH043N60 TO247 Tube N/A N/A 30 Units THERMAL CHARACTERISTICS Symbol Parameter FCH043N60 Unit R Thermal Resistance, Junction to Case, Max. 0.21 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA www.onsemi.com 2