X-On Electronics has gained recognition as a prominent supplier of FCH085N80_F155 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FCH085N80_F155 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FCH085N80_F155 ON Semiconductor

FCH085N80_F155 electronic component of ON Semiconductor
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Part No.FCH085N80_F155
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET SuperFET2 800V
Datasheet: FCH085N80_F155 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 15.719 ea
Line Total: USD 15.72 
Availability - 416
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
416
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 15.719
10 : USD 13.211
25 : USD 11.572
50 : USD 11.561
100 : USD 11.451
450 : USD 11.44

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
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Maximum Operating Temperature
Pd - Power Dissipation
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Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
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Brand
Forward Transconductance - Min
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FCH085N80_F155 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FCH085N80_F155 and other electronic components in the MOSFETs category and beyond.

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MOSFET N-Channel, SUPERFET II 800 V, 46 A, 85 m FCH085N80 Description SuperFET II MOSFET is ON Semiconductors brandnew high www.onsemi.com voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize V R MAX I MAX DS DS(ON) D conduction loss, provide superior switching performance, dv/dt rate 800 V 85 m 10 V 46 A and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial D power applications. Features Typ. R = 67 m DS(on) 850 V T = 150C J G Ultra Low Gate Charge (Typ. Q = 196 nC) g Low E (Typ. 18 J 400 V) OSS S Low Effective Output Capacitance (Typ. C = 568 pF) oss(eff.) N-CHANNEL MOSFET 100% Avalanche Tested These Devices are PbFree and are RoHS Compliant Applications ACDC Power Supply LED Lighting TO2473LD CASE 340CH MARKING DIAGRAM FCH085N80 AYWWG FCH085N80 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: November, 2019 Rev. 3 FCH085N80/DFCH085N80 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 800 V DSS V Gate to Source Voltage DC 20 V GSS AC (f > 1 Hz) 30 I Drain Current: Continuous (T = 25C) 46 A D C Continuous (T = 100C) 29 C I Drain Current: Pulsed (Note 1) 138 A DM E Single Pulsed Avalanche Energy (Note 2) 1701 mJ AS I Avalanche Current (Note 2) 9.2 A AS E Repetitive Avalanche Energy (Note 1) 4.4 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 446 W D C Derate Above 25C 3.5 W/C T , T Operating and Storage Temperature Range 55 to + 150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 9.2 A, V = 50 V, R = 25 , starting T = 25 C. AS DD G J 3. I 46 A, di/dt 200 A/ s, V BV , starting T = 25 C. SD DD DSS J PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCH085N80F155 FCH085N80 TO247 G03 Tube N/A N/A 30 Units THERMAL CHARACTERISTICS Symbol Parameter FCH085N80F155 Unit R Thermal Resistance, Junction to Case, Max. 0.28 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40.0 JA www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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