MOSFET N-Channel, SUPERFET II 800 V, 46 A, 85 m FCH085N80 Description SuperFET II MOSFET is ON Semiconductors brandnew high www.onsemi.com voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize V R MAX I MAX DS DS(ON) D conduction loss, provide superior switching performance, dv/dt rate 800 V 85 m 10 V 46 A and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial D power applications. Features Typ. R = 67 m DS(on) 850 V T = 150C J G Ultra Low Gate Charge (Typ. Q = 196 nC) g Low E (Typ. 18 J 400 V) OSS S Low Effective Output Capacitance (Typ. C = 568 pF) oss(eff.) N-CHANNEL MOSFET 100% Avalanche Tested These Devices are PbFree and are RoHS Compliant Applications ACDC Power Supply LED Lighting TO2473LD CASE 340CH MARKING DIAGRAM FCH085N80 AYWWG FCH085N80 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: November, 2019 Rev. 3 FCH085N80/DFCH085N80 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 800 V DSS V Gate to Source Voltage DC 20 V GSS AC (f > 1 Hz) 30 I Drain Current: Continuous (T = 25C) 46 A D C Continuous (T = 100C) 29 C I Drain Current: Pulsed (Note 1) 138 A DM E Single Pulsed Avalanche Energy (Note 2) 1701 mJ AS I Avalanche Current (Note 2) 9.2 A AS E Repetitive Avalanche Energy (Note 1) 4.4 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 446 W D C Derate Above 25C 3.5 W/C T , T Operating and Storage Temperature Range 55 to + 150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 9.2 A, V = 50 V, R = 25 , starting T = 25 C. AS DD G J 3. I 46 A, di/dt 200 A/ s, V BV , starting T = 25 C. SD DD DSS J PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCH085N80F155 FCH085N80 TO247 G03 Tube N/A N/A 30 Units THERMAL CHARACTERISTICS Symbol Parameter FCH085N80F155 Unit R Thermal Resistance, Junction to Case, Max. 0.28 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40.0 JA www.onsemi.com 2