MOSFET N-Channel, SUPERFET II, FRFET 600 V, 37 A, 104 m FCH104N60F Description SUPERFET II MOSFET is ON Semiconductors brandnew high www.onsemi.com voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate V R MAX I MAX charge performance. This technology is tailored to minimize DSS DS(ON) D conduction loss, provide superior switching performance, dv/dt rate 600 V 37 A 104 m and higher avalanche energy. Consequently, SUPERFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial D power applications. SUPERFET II FRFET MOSFETs optimized body diode reverse recovery performance can remove additional component and improve system reliability. Features G 650 V T = 150C J Typ. R = 98 m DS(on) S Ultra Low Gate Charge (Typ. Q = 107 nC) g N-Channel MOSFET Low Effective Output Capacitance (Typ. C = 109 pF) oss(eff.) 100% Avalanche Tested This Device is PbFree and is RoHS Compliant Applications G Telecom / Server Power Supplies D S Industrial Power Supplies TO247 EV Charger CASE 340CK UPS / Solar MARKING DIAGRAM Y&Z&3&K FCH 104N60F Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot Code FCH104N60F = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: October, 2020 Rev. 3 FCH104N60F/DFCH104N60F ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise specified) C Symbol Parameter FCH104N60F Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage DC 20 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 37 A D C Continuous (T = 100C) 24 C I Drain Current Pulsed (Note 1) 111 A DM E Single Pulsed Avalanche Energy (Note 2) 809 mJ AS I Avalanche Current (Note 1) 6.8 A AR E Repetitive Avalanche Energy (Note 1) 3.57 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 P Power Dissipation (T = 25C) 357 W D C Derate Above 25C 2.85 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 s 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. I = 6.8 A, R = 25 , starting T = 25C. AS G J 3. I 18.5 A, di/dt 200 A/ s, V 380 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter FCH104N60F Unit R Thermal Resistance, Junction to Case, Max. 0.35 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCH104N60F FCH104N60F TO247 Tube N/A N/A 30 Units www.onsemi.com 2