X-On Electronics has gained recognition as a prominent supplier of FCH125N65S3R0-F155 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FCH125N65S3R0-F155 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FCH125N65S3R0-F155 ON Semiconductor

FCH125N65S3R0-F155 electronic component of ON Semiconductor
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Part No.FCH125N65S3R0-F155
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: SUPERFET3 650V TO247 PKG
Datasheet: FCH125N65S3R0-F155 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
450: USD 5.804 ea
Line Total: USD 2611.8 
Availability - 0
MOQ: 450  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 450
Multiples : 30
450 : USD 5.804
1500 : USD 5.7458
3000 : USD 5.6889
6000 : USD 5.632
9000 : USD 5.5751
12000 : USD 5.1107
15000 : USD 5.0605
24000 : USD 5.0089
30000 : USD 4.9599
75000 : USD 4.9097

0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 450
Multiples : 1
450 : USD 5.804
500 : USD 5.7458
1000 : USD 5.6889
2000 : USD 5.632
2500 : USD 5.5751
3000 : USD 5.1107
4000 : USD 5.0605
5000 : USD 5.0089
10000 : USD 4.9599
20000 : USD 4.9097

0
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 6.6236
10 : USD 4.3387
25 : USD 4.0995
100 : USD 3.5558
450 : USD 3.0338

0
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 5.3001
5 : USD 3.6189
13 : USD 3.4195

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the FCH125N65S3R0-F155 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FCH125N65S3R0-F155 and other electronic components in the MOSFETs category and beyond.

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FCH125N65S3R0 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 24 A, 125 m Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate V R MAX I MAX DSS DS(ON) D charge performance. This advanced technology is tailored to minimize 650 V 125 m 10 V 24 A conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier D design implementation. Features 700 V T = 150C J G Typ. R = 105 m DS(on) Ultra Low Gate Charge (Typ. Q = 46 nC) S g Low Effective Output Capacitance (Typ. C = 439 pF) oss(eff.) N-Channel MOSFET 100% Avalanche Tested These Devices are PbFree and are RoHS Compliant Applications Telecom / Server Power Supplies G Industrial Power Supplies D S UPS / Solar TO2473LD CASE 340CH MARKING DIAGRAM Y&Z&3&K FCH125 N65S3R0 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCH125N65S3R0 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2019 Rev. 5 FCH125N65S3R0/DFCH125N65S3R0 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise specified) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 V I Drain Current Continuous (T = 25C) 24 A D C Continuous (T = 100C) 15 C I Drain Current Pulsed (Note 1) 60 A DM E Single Pulsed Avalanche Energy (Note 2) 115 mJ AS I Avalanche Current (Note 2) 3.7 A AS E Repetitive Avalanche Energy (Note 1) 1.81 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 181 W D C Derate Above 25C 1.45 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 s 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. I = 3.7 A, R = 25 , starting T = 25C. AS G J 3. I 12 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 0.69 JC C/W R Thermal Resistance, Junction to Ambient, Max. 40 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Quantity FCH125N65S3R0F155 FCH125N65S3R0 TO2473LD 30 Units / Tube (Pb-Free) www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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