X-On Electronics has gained recognition as a prominent supplier of FCH165N60E MOSFETs across the USA, India, Europe, Australia, and various other global locations. FCH165N60E MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FCH165N60E ON Semiconductor

FCH165N60E electronic component of ON Semiconductor
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Part No.FCH165N60E
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 600V 23A N-Chnl SuperFET Easy-Drive
Datasheet: FCH165N60E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.114 ea
Line Total: USD 4.11 
Availability - 614
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
614
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 4.114
30 : USD 3.168

   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
Qg - Gate Charge
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We are delighted to provide the FCH165N60E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FCH165N60E and other electronic components in the MOSFETs category and beyond.

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MOSFET N-Channel, SUPERFET II, Easy-Drive 600 V, 23 A, 165 m FCH165N60E Description SUPERFET II MOSFET is ON Semiconductors brand new high www.onsemi.com voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize V R MAX I MAX DS DS(ON) D conduction loss, provide superior switching performance, dv/dt rate 600 V 165 m 10 V 23 A and higher avalanche energy. Consequently, SUPERFET II MOSFET easydrive series offers slightly slower rise and fall times compared to the SUPERFET II MOSFET series. Noted by the E part number D suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SUPERFET II MOSFET series. G Features Typ. R = 132 m DS(on) 650 V T = 150C J S Ultra Low Gate Charge (Typ. Q = 57 nC) g N-CHANNEL MOSFET Low Effective Output Capacitance (Typ. C = 204 pF) oss(eff.) 100% Avalanche Tested S D These Devices are PbFree and are RoHS Compliant GG Applications Telecom / Sever Power Supplies Industrial Power Supplies TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FCH 165N60E Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCH165N60E = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: December, 2019 Rev. 3 FCH165N60E/DFCH165N60E ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter FCH165N60E Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage DC 20 V GSS AC (f > 1 Hz) 30 I Drain Current: Continuous (T = 25C) 23 A D C Continuous (T = 100C) 14 C I Drain Current: Pulsed (Note 1) 69 A DM E Single Pulsed Avalanche Energy (Note 2) 525 mJ AS I Avalanche Current (Note 1) 5 A AR E Repetitive Avalanche Energy (Note 1) 2.27 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 227 W D C Derate Above 25C 1.82 W/C T , T Operating and Storage Temperature Range 55 to + 150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 5.0 A, R = 25 , Starting T = 25 C. AS G J 3. I 11.5 A, di/dt 200 A/ s, V 380 V, Starting T = 25 C. SD DD J PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCH165N60E FCH165N60E TO247 Tube N/A N/A 30 Units THERMAL CHARACTERISTICS Symbol Parameter FCH165N60E Unit R Thermal Resistance, Junction to Case, Max. 0.55 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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