MOSFET N-Channel, SUPERFET II, Easy-Drive 600 V, 23 A, 165 m FCH165N60E Description SUPERFET II MOSFET is ON Semiconductors brand new high www.onsemi.com voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize V R MAX I MAX DS DS(ON) D conduction loss, provide superior switching performance, dv/dt rate 600 V 165 m 10 V 23 A and higher avalanche energy. Consequently, SUPERFET II MOSFET easydrive series offers slightly slower rise and fall times compared to the SUPERFET II MOSFET series. Noted by the E part number D suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SUPERFET II MOSFET series. G Features Typ. R = 132 m DS(on) 650 V T = 150C J S Ultra Low Gate Charge (Typ. Q = 57 nC) g N-CHANNEL MOSFET Low Effective Output Capacitance (Typ. C = 204 pF) oss(eff.) 100% Avalanche Tested S D These Devices are PbFree and are RoHS Compliant GG Applications Telecom / Sever Power Supplies Industrial Power Supplies TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FCH 165N60E Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCH165N60E = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: December, 2019 Rev. 3 FCH165N60E/DFCH165N60E ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter FCH165N60E Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage DC 20 V GSS AC (f > 1 Hz) 30 I Drain Current: Continuous (T = 25C) 23 A D C Continuous (T = 100C) 14 C I Drain Current: Pulsed (Note 1) 69 A DM E Single Pulsed Avalanche Energy (Note 2) 525 mJ AS I Avalanche Current (Note 1) 5 A AR E Repetitive Avalanche Energy (Note 1) 2.27 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 227 W D C Derate Above 25C 1.82 W/C T , T Operating and Storage Temperature Range 55 to + 150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 5.0 A, R = 25 , Starting T = 25 C. AS G J 3. I 11.5 A, di/dt 200 A/ s, V 380 V, Starting T = 25 C. SD DD J PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCH165N60E FCH165N60E TO247 Tube N/A N/A 30 Units THERMAL CHARACTERISTICS Symbol Parameter FCH165N60E Unit R Thermal Resistance, Junction to Case, Max. 0.55 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA www.onsemi.com 2