MOSFET N-Channel, SUPERFET II, FRFET 650 V, 20.6 A, 190 m FCH190N65F-F085 Description SUPERFET II MOSFET is ON Semiconductors brand new high www.onsemi.com voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize V R MAX I MAX DS DS(ON) D conduction loss, provide superior switching performance, dv/dt rate 650 V 190 m 10 V 20.6 A and higher avalanche energy. Consequently SUPERFET II is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DCDC, Interleaved Boost D PFC, Boost PFC for HEVEV automotive. SUPERFET II, FRFET MOSFETs optimized body diode reverse recovery performance can remove additional component and improve system reliability. G Features S Typ. R = 148 m at V = 10 V, I = 10 A DS(on) GS D Typ. Q = 63 nC at V = 10 V, I = 10 A g(tot) GS D N-CHANNEL MOSFET UIS Capability AECQ101 Qualified and PPAP Capable S These Devices are PbFree and are RoHS Compliant D GG Applications Automotive On Board Charger Automotive DC/DC Converter for HEV TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FCH 190N65F Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCH190N65FF085 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2019 Rev. 3 FCH190N65FF085/DFCH190N65F F085 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage 20 V GSS I Drain Current Continuous (V = 10) (Note 1) 20.6 A D GS Pulsed Drain Current See Fig. 4 A E Single Pulsed Avalanche Rating (Note 2) 400 mJ AS dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 P Power Dissipation 208 W D Derate Above 25C 1.67 W/C T , T Operating and Storage Temperature Range 55 to + 150 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. 2. Starting T = 25 C, L = 50 mH, I = 4 A, V = 100 V during inductor charging and V = 0 V during time in avalanche. J AS DD DD 3. I 10 A, di/dt 200 A/ s, V 380 V, Starting T = 25 C. SD DD J PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FCH190N65F FCH190N65FF085 TO2473 30 Units THERMAL CHARACTERISTICS Symbol Parameter Value Unit Thermal Resistance, Junction to Case, Max. 0.6 C/W R JC R Thermal Resistance, Junction to Ambient, Max. (Note 4) 40 JA 4. R is the sum of the junctiontocase and casetoambient thermal resistance, where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design, while R is determined by the board design. The maximum rating JC JA 2 presented here is based on mounting on a 1 in pad of 2oz copper. www.onsemi.com 2