X-On Electronics has gained recognition as a prominent supplier of FCH47N60F_F133 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FCH47N60F_F133 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FCH47N60F_F133 ON Semiconductor

FCH47N60F_F133 electronic component of ON Semiconductor
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See Product Specifications
Part No.FCH47N60F_F133
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 600V N-Channel MOSFET
Datasheet: FCH47N60F_F133 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 11.6615 ea
Line Total: USD 11.66 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 15.5441
10 : USD 13.715
100 : USD 11.5825
500 : USD 10.3035
1000 : USD 9.4508

0
Ship by Thu. 21 Nov to Wed. 27 Nov
MOQ : 30
Multiples : 30
30 : USD 10.638
60 : USD 9.9346
120 : USD 9.6507

0
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 11.6615
10 : USD 10.118
25 : USD 9.6519
100 : USD 8.3781
450 : USD 7.2907

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Configuration
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the FCH47N60F_F133 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FCH47N60F_F133 and other electronic components in the MOSFETs category and beyond.

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MOSFET N-Channel, SUPERFET , FRFET 600 V, 47 A, 73 m FCH47N60F Description SUPERFET MOSFET is ON Semiconductors first generation of www.onsemi.com high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on resistance and lower gate charge performance. This technology is tailored to V R MAX I MAX DS DS(ON) D minimize conduction loss, provide superior switching 600 V 73 m 10 V 47 A performance,dv/dt rate and higher avalanche energy. Consequently, SUPERFET MOSFET is very suitable for the switching power applications such as PFC, server / telecom power, FPD TV power, D ATX power and industrial power applications. SUPERFET FRFET MOSFETs optimized body diode reverse recovery performance can remove additional component and improve system reliability. G Features S 650 V T = 150C J Typ. R = 58 m DS(on) N-CHANNEL MOSFET Ultra Low Gate Charge (Typ. Q = 210 nC) g Low Effective Output Capacitance (Typ. C eff. = 420 pF) oss S 100% Avalanche Tested D GG These Devices are PbFree and are RoHS Compliant Applications Solar Inventer ACDC Power Supply TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FCH 47N60F Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCH47N60F = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: December, 2019 Rev. 4 FCH47N60F/DFCH47N60F ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter FCH47N60FF133 Unit V Drain to Source Voltage 600 V DSS I Drain Current Continuous (T = 25C) 47 A D C 29.7 A Continuous (T = 100C) C I Drain Current Pulsed (Note 1) 141 A DM V GateSource Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 1800 mJ AS I Avalanche Current (Note 1) 47 A AR E Repetitive Avalanche Energy (Note 1) 41.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/ns P Power Dissipation (T = 25C) 417 W D C Derate Above 25C 3.33 W/C T , T Operating and Storage Temperature Range 55 to + 150 C J STG T 300 C Maximum Lead Temperature for Soldering Purpose, from Case for 5 second L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. I = 18 A, V = 50 V, R = 25 , Starting T = 25 C AS DD G J 3. I 47 A, di/dt 1200 A/ s, V BV , Starting T = 25 C. SD DD DSS J PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FCH47N60F FCH47N60FF133 TO2473 30 Units THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 0.3 C/W JC R Thermal Resistance, Junction to Ambient, Max. (Note 34) 41.7 JA www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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