MOSFET N-Channel, SUPERFET , FRFET 600 V, 47 A, 73 m FCH47N60F Description SUPERFET MOSFET is ON Semiconductors first generation of www.onsemi.com high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on resistance and lower gate charge performance. This technology is tailored to V R MAX I MAX DS DS(ON) D minimize conduction loss, provide superior switching 600 V 73 m 10 V 47 A performance,dv/dt rate and higher avalanche energy. Consequently, SUPERFET MOSFET is very suitable for the switching power applications such as PFC, server / telecom power, FPD TV power, D ATX power and industrial power applications. SUPERFET FRFET MOSFETs optimized body diode reverse recovery performance can remove additional component and improve system reliability. G Features S 650 V T = 150C J Typ. R = 58 m DS(on) N-CHANNEL MOSFET Ultra Low Gate Charge (Typ. Q = 210 nC) g Low Effective Output Capacitance (Typ. C eff. = 420 pF) oss S 100% Avalanche Tested D GG These Devices are PbFree and are RoHS Compliant Applications Solar Inventer ACDC Power Supply TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FCH 47N60F Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCH47N60F = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: December, 2019 Rev. 4 FCH47N60F/DFCH47N60F ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter FCH47N60FF133 Unit V Drain to Source Voltage 600 V DSS I Drain Current Continuous (T = 25C) 47 A D C 29.7 A Continuous (T = 100C) C I Drain Current Pulsed (Note 1) 141 A DM V GateSource Voltage 30 V GSS E Single Pulsed Avalanche Energy (Note 2) 1800 mJ AS I Avalanche Current (Note 1) 47 A AR E Repetitive Avalanche Energy (Note 1) 41.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/ns P Power Dissipation (T = 25C) 417 W D C Derate Above 25C 3.33 W/C T , T Operating and Storage Temperature Range 55 to + 150 C J STG T 300 C Maximum Lead Temperature for Soldering Purpose, from Case for 5 second L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. I = 18 A, V = 50 V, R = 25 , Starting T = 25 C AS DD G J 3. I 47 A, di/dt 1200 A/ s, V BV , Starting T = 25 C. SD DD DSS J PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FCH47N60F FCH47N60FF133 TO2473 30 Units THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 0.3 C/W JC R Thermal Resistance, Junction to Ambient, Max. (Note 34) 41.7 JA www.onsemi.com 2