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FCP4N60 N-Channel SuperFET MOSFET December 2013 FCP4N60 N-Channel SuperFET MOSFET 600 V, 3.9 A, 1.2 Features Description 650V T = 150C SuperFET MOSFET is Fairchild Semiconductors first gener- J ation of high voltage super-junction (SJ) MOSFET family that is Typ. = 1.0 DS(on) utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Q = 12.8 nC) g resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch- Low Effective Output Capacitance (Typ. C = 32 pF) oss(eff.) ing performance, dv/dt rate and higher avalanche energy. Con- 100% Avalanche Tested sequently, SuperFET MOSFET is very suitable for the switching RoHSCompliant power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Application LCD / LED / PDP TV and Monitor Lighting Solar Inverter AC-DC Power Supply D G G D S TO-220 S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCP4N60 Unit V Drain-Source Voltage 600 V DSS I Drain Current - Continuous (T = 25 C) 3.9 A D C - Continuous (T = 100 C) 2.5 A C (Note 1) I Drain Current - Pulsed A DM 11.7 V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 128 mJ AS (Note 1) I Avalanche Current 3.9 A AR (Note 1) E Repetitive Avalanche Energy 5.0 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns (T = 25 C) P Power Dissipation 50 W C D - Derate Above 25C 0.4 W/ C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering, L 300 C 1/8 from Case for 5 Seconds. Thermal Characteristics Symbol Parameter FCP4N60 Unit R Thermal Resistance, Junction to Case, Max. 2.5 JC o C/W Thermal Resistance, Junction to Ambient, Max. 83 R JA 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCP4N60 Rev. C1 R