X-On Electronics has gained recognition as a prominent supplier of FCPF099N65S3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FCPF099N65S3 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FCPF099N65S3 ON Semiconductor

FCPF099N65S3 electronic component of ON Semiconductor
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See Product Specifications
Part No.FCPF099N65S3
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET SuperFET3 650V 99 mOhm
Datasheet: FCPF099N65S3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.0345 ea
Line Total: USD 7.03 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 50
1000 : USD 4.4528
2000 : USD 4.4087
2500 : USD 4.3646
3000 : USD 4.3218
4000 : USD 4.2777
5000 : USD 4.0597
10000 : USD 4.0194
20000 : USD 3.9791
50000 : USD 3.9388

0
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 7.731
10 : USD 6.8238
30 : USD 6.2854
100 : USD 5.5602
500 : USD 5.3168
1000 : USD 5.2078

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 7.0345
10 : USD 4.6085
25 : USD 4.3496
100 : USD 3.7697
500 : USD 3.2104
1000 : USD 2.7133

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Vgs th - Gate-Source Threshold Voltage
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Maximum Operating Temperature
Pd - Power Dissipation
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Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
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Configuration
Series
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Forward Transconductance - Min
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We are delighted to provide the FCPF099N65S3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FCPF099N65S3 and other electronic components in the MOSFETs category and beyond.

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FCPF099N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 m Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductors brand new high voltage superjunction (SJ) MOSFET family that is utilizing charge V R MAX I MAX DSS DS(ON) D balance technology for outstanding low onresistance and lower gate 650 V 99 m 10 V 30 A charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET D Easy drive series helps manage EMI issues and allows for easier design implementation. Features 700 V T = 150C G J Typ. R = 85 m DS(on) Ultra Low Gate Charge (Typ. Q = 57 nC) g S Low Effective Output Capacitance (Typ. C = 517 pF) oss(eff.) POWER MOSFET 100% Avalanche Tested These Devices are PbFree and are RoHS Compliant Applications Telecom / Server Power Supplies G D Industrial Power Supplies S UPS / Solar TO220F CASE 221AT MARKING DIAGRAM Y&Z&3&K FCPF 099N65S3 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot FCPF099N65S3 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2019 Rev. 4 FCPF099N65S3/DFCPF099N65S3 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 30* A D C Continuous (T = 100C) 19* C I Drain Current Pulsed (Note 1) 75* A DM E Single Pulsed Avalanche Energy (Note 2) 145 mJ AS I Avalanche Current (Note 2) 4.4 A AS E Repetitive Avalanche Energy (Note 1) 0.43 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 43 W D C Derate Above 25C 0.34 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Drain current limited by maximum junction temperature. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 4.4 A, R = 25 , starting T = 25C. AS G J 3. I 15 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 2.94 C/W JC R Thermal Resistance, Junction to Ambient, Max. 62.5 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCPF099N65S3 FCPF099N65S3 TO220F Tube N/A N/A 50 Units www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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