MOSFET N-Channel, SUPERFET II 600 V, 47 A, 70 m FCH47N60 Description www.onsemi.com SuperFET II MOSFET is ON Semiconductors first generation of high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower V R MAX I MAX gate charge performance. This technology is tailored to minimize DS DS(ON) D conduction loss, provide superior switching performance, dv/dt rate 600 V 70 m 10 V 47 A and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial D power applications. Features Typ. R = 58 m DS(on) G 650 V T = 150C J Ultra Low Gate Charge (Typ. Q = 210 nC) g Low Effective Output Capacitance (Typ. C = 420 pF) oss(eff.) S 100% Avalanche Tested N-CHANNEL MOSFET These Devices are PbFree and are RoHS Compliant S Applications D GG Telecom / Sever Power Supplies Industrial Power Supplies TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FCH 47N60 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCH47N60 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: April, 2020 Rev. 3 FCH47N60/DFCH47N60 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter FCH47N60 Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage 30 GSS I Drain Current: A Continuous (T = 25C) 47 D C Continuous (T = 100C) 29.7 C I Drain Current: Pulsed (Note 1) 141 A DM E Single Pulsed Avalanche Energy (Note 2) 1800 mJ AS I Avalanche Current (Note 1) 47 A AR E Repetitive Avalanche Energy (Note 1) 41.7 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 417 W D C Derate Above 25C 3.33 W/C T , T Operating and Storage Temperature Range 55 to + 150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 18 A, V = 50 V, R = 25 , Starting T = 25 C. AS DD G J 3. I 48 A, di/dt 200 A/ s, V BV , Starting T = 25 C. SD DD DSS J PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCH47N60 F133 FCH47N60 TO247 Tube N/A N/A 30 Units THERMAL CHARACTERISTICS Symbol Parameter FCH47N60 Unit R Thermal Resistance, Junction to Case, Max. 0.3 C/W JC R Thermal Resistance, CasetoSink, Typ. 0.24 C/W JA R Thermal Resistance, Junction to Ambient, Max. 41.7 C/W JA www.onsemi.com 2