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FCMT299N60 N-Channel SuperFET II MOSFET August 2014 FCMT299N60 N-Channel SuperFET II MOSFET 600 V, 12 A, 299 m Features Description 650 V T = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new J high voltage super-junction (SJ) MOSFET family that is utilizing R = 250 m (Typ.) DS(on) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Q = 39 nC) g and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching perfor- Low Effective Output Capacitance (Typ. C = 127 pF) oss(eff.) mance, dv/dt rate and higher avalanche energy. Consequently, 100% Avalanche Tested SuperFET II MOSFET is very suitable for the switching power applications such as server/telecom power, adaptor and solar RoHS Compliant inverter applications. Applications The Power88 package is an ultra-slim surface-mount package 2 (1 mm high) with a low profile and small footprint (8x8 mm ). Server and Telecom Power Supplies SuperFET II MOSFET in a Power88 package offers excellent Solar Inverters switching performance due to lower parasitic source inductance and separated power and drive sources. Power88 offers Mois- Adaptors ture Sensitivity Level 1 (MSL 1). D S2 S2 G S1 : Driver Source S1 S2 : Power Source G Power88 S1 S2 o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCMT299N60 Unit V Drain to Source Voltage 600 V DSS -DC 20 V Gate to Source Voltage V GSS -AC (f > 1 Hz) 30 o -Continuous (T = 25 C) 12 C I Drain Current A D o -Continuous (T = 100 C) 7.9 C I Drain Current - Pulsed (Note 1) 36 A DM E Single Pulsed Avalanche Energy (Note 2) 234 mJ AS I Avalanche Current (Note 1) 2.5 A AR E Repetitive Avalanche Energy (Note 1) 1.25 mJ AR Peak Diode Recovery dv/dt (Note 3) 20 V/ns dv/dt MOSFET dv/dt 100 V/ns o (T = 25 C) 125 W C P Power Dissipation D o o - Derate above 25C1W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L Thermal Characteristics Symbol Parameter FCMT299N60 Unit R Thermal Resistance, Junction to Case, Max. 1.0 JC o C/W 2 R Thermal Resistance, Junction to Ambient (* 1 in pad of 2 oz copper), Max. 45 JA 2014 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCMT299N60 Rev. C0