MOSFET N-Channel, SUPERFET II 600 V, 28 A, 130 m FCH130N60 Description www.onsemi.com SUPERFET II MOSFET is ON Semiconductors brandnew high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate V R MAX I MAX DSS DS(ON) D charge performance. This advanced technology is tailored to minimize 600 V 28 A 130 m conduction loss, provide superior switching performance, andwithstand extreme dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET is suitable for various AC/DC D power conversion for system miniaturization and higher efficiency. Features 650 V T = 150C J Typ. R = 112 m G DS(on) Ultra Low Gate Charge (Typ. Q = 54 nC) g Low Effective Output Capacitance (Typ. C = 240 pF) oss(eff.) S 100% Avalanche Tested N-Channel MOSFET This Device is PbFree and is RoHS Compliant Applications Telecom / Server Power Supplies Industrial Power Supplies G D ACDC Power Supply S TO247 CASE 340CK MARKING DIAGRAM Y&Z&3&K FCH 130N60 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot Code FCH130N60 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: May, 2021 Rev. 3 FCH130N60/DFCH130N60 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter FCH130N60 Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage DC 20 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 28 A D C Continuous (T = 100C) 18 C I Drain Current Pulsed (Note 1) 84 A DM E Single Pulsed Avalanche Energy (Note 2) 720 mJ AS I Avalanche Current (Note 1) 6 A AR E Repetitive Avalanche Energy (Note 1) 2.78 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 278 W D C Derate Above 25C 2.2 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 s 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. I = 6 A, V = 50 V, R = 25 , starting T = 25C. AS DD G J 3. I 14 A, di/dt 200 A/ s, V BV , starting T = 25C. SD DD DSS J THERMAL CHARACTERISTICS Symbol Parameter FCH130N60 Unit R Thermal Resistance, Junction to Case, Max. 0.45 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCH130N60 FCH130N60 TO247 Tube N/A N/A 30 Units www.onsemi.com 2