MOSFET N-Channel, SUPERFET II, FRFET 600 V, 37 A, 104 m FCH104N60F-F085 Description SUPERFET II MOSFET is ON Semiconductors brandnew high www.onsemi.com voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate V R MAX I MAX charge performance. This technology is tailored to minimize DSS DS(ON) D conduction loss, provide superior switching performance, dv/dt rate 600 V 37 A 104 m and higher avalanche energy. Consequently SUPERFET II is very well suited for the Soft switching and Hard Switching topologies like D High Voltage Full Bridge and Half Bridge DCDC, Interleaved Boost PFC, Boost PFC for HEVEV automotive. SUPERFET II FRFET MOSFETs optimized body diode reverse recovery performance can remove additional component and improve system reliability. G Features Typical R = 91 m at V = 10 V, I = 18.5 A DS(on) GS D S Typical Q = 109 nC at V = 10 V, I = 18.5 A g(tot) GS D N-Channel MOSFET UIS Capability Qualified to AEC Q101 and PPAP Capable This Device is PbFree and is RoHS Compliant Applications G Automotive On Board Charger D S Automotive DC/DC Converter for HEV TO247 CASE 340CK MARKING DIAGRAM Y&Z&3&K FCH 104N60F Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot Code FCH104N60F = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: December, 2020 Rev. 3 FCH104N60FF085/DFCH104N60F F085 MAXIMUM RATINGS (T = 25C, unless otherwise specified) C Symbol Parameter Ratings Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage 20 V GS I A Drain Current Continuous (V = 10) (Note 1) T = 25C 37 D GS C T = 100C 24 C Pulsed Drain Current See Fig. 4 E Single Pulsed Avalanche Rating (Note 2) 809 mJ AS dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 P Power Dissipation 357 W D Derate Above 25C 2.85 W/C T , T Operating and Storage Temperature 55 to +150 C J STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by bondwire configuration. 2. Starting T = 25C, L = 35 mH, I = 6.8 A, V = 100 V during inductor charging and V = 0 V during time in avalanche. J AS DD DD 3. I 18.5 A, di/dt 200 A/ s, V 380 V, starting T = 25C. SD DD J 4. R is the sum of the junctiontocase and casetoambient thermal resistance, where the case thermal reference is defined as the solder JA mounting surface of the drain pins. R is guaranteed by design, while R is determined by the board design. The maximum rating JC JA 2 presented here is based on mounting on a 1 in pad of 2oz copper. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit R Maximum Thermal Resistance, Junction to Case 0.35 C/W JC Maximum Thermal Resistance, Junction to Ambient 40 R JA PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Reel Size Tape Width Quantity FCH104N60FF085 FCH104N60F TO247 30 www.onsemi.com 2