MOSFET N-Channel, SUPERFET II, FRFET 650 V, 76 A, 41 m FCH041N65EFL4 Description SuperFET II Mosfet is ON Semiconductors brandnew high www.onsemi.com voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize V R MAX I MAX DS DS(ON) D conduction loss, provide superior switching performance, dv/dt rate 650 V 41 m 10 V 76 A and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server / telecom power, FPD TV power, ATX power and industrial power D applications. SuperFET II FREFET MOSFETs optimized body diode reverse recovery performance can remove additional component and improve system reliability. G Features S1: Driver Source Typ. R = 36 m DS(on) S2: Power Source 700 V T = 150C S1 S2 J Ultra Low Gate Charge (Typ. Q = 229 nC) g N-CHANNEL MOSFET Low Effective Output Capacitance (Typ. C = 631 pF) oss(eff.) 100% Avalanche Tested These Devices are PbFree and are RoHS Compliant Applications ACDC Power Supply LCD/LED/PDP TV D S2 Solar Inverter S1 G Telecom / Server Power Supplies TO2474LD CASE 340CJ MARKING DIAGRAM Y&Z&3&K FCH041N65 EFL4 FCH041N65EFL4 = Specific Device Code Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Week & Year) K = Lot ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2020 Rev. 3 FCH041N65EFL4/DFCH041N65EFL4 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 20 V GSS AC (f > 1 Hz) 30 I Drain Current: Continuous (T = 25C) 76 A D C Continuous (T = 100C) 48.1 C I Drain Current: Pulsed (Note 1) 228 A DM E Single Pulsed Avalanche Energy (Note 2) 2025 mJ AS I Avalanche Current (Note 2) 15 A AS E Repetitive Avalanche Energy (Note 1) 5.95 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 P Power Dissipation (T = 25C) 595 W D C Derate Above 25C 4.76 W/C T , T Operating and Storage Temperature Range 55 to + 150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 15 A, R = 25 , starting T = 25 C. AS G J 3. I 38 A, di/dt 200 A/ s, V 380 V, starting T = 25 C. SD DD J PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCH041N65EFL4 FCH041N65EF TO247 4L Tube N/A N/A 30 Units THERMAL CHARACTERISTICS Symbol Parameter FCH041N65EFL4 Unit R Thermal Resistance, Junction to Case, Max. 0.21 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA www.onsemi.com 2