FCD600N65S3R0 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 6 A, 600 m Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate V R MAX I MAX DSS DS(ON) D charge performance. This advanced technology is tailored to minimize 650 V 600 m 10 V 6 A conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps D manage EMI issues and allows for easier design implementation. Features 700 V T = 150C J G Typ. R = 493 m DS(on) Ultra Low Gate Charge (Typ. Q = 11 nC) g S Low Effective Output Capacitance (Typ. C = 127 pF) oss(eff.) N-Channel MOSFET 100% Avalanche Tested D These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant G S Applications DPAK Computing / Display Power Supplies TO252 CASE 369AS Telecom / Server Power Supplies Industrial Power Supplies MARKING DIAGRAM Lighting / Charger / Adapter Y&Z&3&K FCD600 N65S3R0 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCD600N65S3R0 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2019 Rev. 4 FCD600N65S3R0/DFCD600N65S3R0 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise specified) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 V I Drain Current Continuous (T = 25C) 6 A D C Continuous (T = 100C) 3.8 C I Drain Current Pulsed (Note 1) 15 A DM E Single Pulsed Avalanche Energy (Note 2) 24 mJ AS I Avalanche Current (Note 2) 1.6 A AS E Repetitive Avalanche Energy (Note 1) 0.54 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 54 W D C Derate Above 25C 0.43 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 s 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. I = 1.6 A, R = 25 , starting T = 25C. AS G J 3. I 3 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 2.3 C/W JC R Thermal Resistance, Junction to Ambient, Max. (Note 4) 52 JA 2 4. Device on 1 in pad 2 oz copper pad on 1.5 x 1.5 in. board of FR4 material. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Reel Size Tape Width Shipping (Qty / Packing) FCD600N65S3R0 FCD600N65S3R0 DPAK 330 mm 16 mm 2500 / Tape & Reel (DPAK3 (TO252 3LD)) (PbFree / Halogen Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2