MOSFET N-Channel, SUPERFET II, FRFET 650 V, 76 A, 41 m FCH041N65EF Description www.onsemi.com SUPERFET II MOSFET is ON Semiconductors brand new high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate D charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET II MOSFET is very suitable for the switching power applications such as PFC, G server/telecom power, FPD TV power, ATX power and industrial power applications. SUPERFET II FRFET MOSFETs optimized S body diode reverse recovery performance can remove additional component and improve system reliability. POWER MOSFET Features 700 V T = 150C J Typ. R = 36 m DS(on) Ultra Low Gate Charge (Typ. Q = 229 nC) g Low Effective Output Capacitance (Typ. C = 631 pF) oss(eff.) 100% Avalanche Tested These Device is PbFree and is RoHS Compliant TO247 Applications long leads LCD / LED / PDP TV CASE 340CH Telecom / Server Power Supplies Solar Inverter MARKING DIAGRAM ACDC Power Supply Y&Z&3&K FCH 041N65EF Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCH041N65EF = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: April, 2020 Rev. 3 FCH041N65EF/DFCH041N65EF ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 20 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 76 A D C Continuous (T = 100C) 48.1 C I Drain Current Pulsed (Note 1) 228 A DM E Single Pulsed Avalanche Energy (Note 2) 2025 mJ AS I Avalanche Current (Note 1) 15 A AR E Repetitive Avalanche Energy (Note 1) 5.95 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 P Power Dissipation (T = 25C) 595 W D C Derate Above 25C 4.76 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 300 C L 1/8 from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. I = 15 A, R = 25 , starting T = 25C. AS G J 3. I 38 A, di/dt 200 A/ s, V 380 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 0.21 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA PACKAGE MARKING AND ORDERING INFORMATION Packing Method Part Number Top Mark Package Reel Size Tape Width Quantity FCH041N65EFF155 FCH041N65EF TO247 Tube N/A N/A 30 Units www.onsemi.com 2