X-On Electronics has gained recognition as a prominent supplier of TK25N60X5,S1F MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK25N60X5,S1F MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK25N60X5,S1F Toshiba

TK25N60X5,S1F electronic component of Toshiba
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Part No.TK25N60X5,S1F
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET Power MOSFET N-Channel
Datasheet: TK25N60X5,S1F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
30: USD 2.7755 ea
Line Total: USD 83.26 
Availability - 0
MOQ: 30  Multiples: 30
Pack Size: 30
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 30
Multiples : 30
30 : USD 3.8454
300 : USD 3.8272
1500 : USD 3.809
3000 : USD 3.7908
6000 : USD 3.7726
9000 : USD 3.7544
12000 : USD 3.7349
15000 : USD 3.7167
24000 : USD 3.6972
30000 : USD 3.6777

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 5.7791
10 : USD 4.9873
100 : USD 4.0865
500 : USD 3.4787
1000 : USD 2.9339
2000 : USD 2.7872

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 30
Multiples : 30
30 : USD 2.7755

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 4.697
10 : USD 4.675
30 : USD 2.871
120 : USD 2.53
510 : USD 2.31
1020 : USD 2.266

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Series
Width
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TK25N60X5,S1F from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK25N60X5,S1F and other electronic components in the MOSFETs category and beyond.

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TK25N60X5 MOSFETs Silicon N-Channel MOS (DTMOS-H) TK25N60X5TK25N60X5TK25N60X5TK25N60X5 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Switching Voltage Regulators 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Fast reverse recovery time: t = 120 ns(typ.) rr (2) Low drain-source on-resistance: R = 0.12 (typ.) DS(ON) (3) Easy to control Gate switching (4) Enhancement mode: V = 3 to 4.5 V(V = 10 V, I = 1.2 mA) th DS D 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specified) 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 unless otherwise specified) unless otherwise specified) aa aa Characteristics Symbol Rating Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 25 A D Drain current (pulsed) (Note 1) I 100 DP Power dissipation (T = 25 ) P 180 W c D Single-pulse avalanche energy (Note 2) E 305 mJ AS Avalanche current I 6.2 A AR Reverse drain current (DC) (Note 1) I 25 DR Reverse drain current (pulsed) (Note 1) I 100 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Mounting torque TOR 0.8 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2014-09 2015 Toshiba Corporation 2015-12-23 1 Rev.2.0TK25N60X5 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 0.694 /W th(ch-c) Channel-to-ambient thermal resistance R 50 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 13.9 mH, R = 25 , I = 6.2 A DD ch G AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2015 Toshiba Corporation 2015-12-23 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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