X-On Electronics has gained recognition as a prominent supplier of TK8A60W,S4VX MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK8A60W,S4VX MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK8A60W,S4VX Toshiba

TK8A60W,S4VX electronic component of Toshiba
TK8A60W,S4VX Toshiba
TK8A60W,S4VX MOSFETs
TK8A60W,S4VX  Semiconductors

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See Product Specifications
Part No. TK8A60W,S4VX
Manufacturer: Toshiba
Category: MOSFETs
Description: Toshiba MOSFET N-Ch 8A 30W FET 600V 570pF 18.5nC
Datasheet: TK8A60W,S4VX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
51: USD 1.2429 ea
Line Total: USD 63.39 
Availability - 0
MOQ: 51  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 50
Multiples : 50
50 : USD 1.5798
100 : USD 1.4828
250 : USD 1.4745
500 : USD 1.2854
1000 : USD 1.2477

0
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 51
Multiples : 1
51 : USD 1.2429

0
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 50
Multiples : 50
50 : USD 1.8774
100 : USD 1.7759
200 : USD 1.6744
300 : USD 1.5729
400 : USD 1.4715

0
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 2.7203
10 : USD 2.4916
25 : USD 2.3513
50 : USD 1.564
100 : USD 1.4363
500 : USD 1.2022
1000 : USD 1.1809

0
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 51
Multiples : 1
51 : USD 1.2429

0
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 41
Multiples : 1
41 : USD 1.2035

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TK8A60W,S4VX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK8A60W,S4VX and other electronic components in the MOSFETs category and beyond.

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TK8A60W MOSFETs Silicon N-Channel MOS (DTMOS) TK8A60WTK8A60WTK8A60WTK8A60W 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Low drain-source on-resistance: R = 0.42 (typ.) DS(ON) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: V = 2.7 to 3.7 V (V = 10 V, I = 0.4 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified) 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 600 V DSS Gate-source voltage V 30 GSS Drain current (DC) (Note 1) I 8.0 A D Drain current (pulsed) (Note 1) I 32 DP Power dissipation (T = 25) P 30 W c D Single-pulse avalanche energy (Note 2) E 105 mJ AS Avalanche current I 2.0 A AR Reverse drain current (DC) (Note 1) I 8.0 DR Reverse drain current (pulsed) (Note 1) I 32 DRP Channel temperature T 150 ch Storage temperature T -55 to 150 stg Isolation voltage (RMS) (t = 1.0 s) V 2000 V ISO(RMS) Mounting torque TOR 0.6 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2012-09 2014-01-05 1 Rev.2.0TK8A60W 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance R 4.17 /W th(ch-c) Channel-to-ambient thermal resistance R 62.5 th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: V = 90 V, T = 25 (initial), L = 46.0 mH, R = 25 , I = 2.0 A DD ch G AR Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-01-05 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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