X-On Electronics has gained recognition as a prominent supplier of TK8R2A06PL,S4X MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK8R2A06PL,S4X MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK8R2A06PL,S4X Toshiba

TK8R2A06PL,S4X electronic component of Toshiba
TK8R2A06PL,S4X Toshiba
TK8R2A06PL,S4X MOSFETs
TK8R2A06PL,S4X  Semiconductors

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See Product Specifications
Part No. TK8R2A06PL,S4X
Manufacturer: Toshiba
Category: MOSFETs
Description: X35 PB-F POWER MOSFET TRANSIST
Datasheet: TK8R2A06PL,S4X Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.4815 ea
Line Total: USD 2.48 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 50
Multiples : 50
50 : USD 1.4104
100 : USD 1.3987
250 : USD 1.3871
500 : USD 1.3225
1000 : USD 1.3111
2500 : USD 1.2998
3000 : USD 1.2883
5000 : USD 1.2769
10000 : USD 1.2654

0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 50
Multiples : 50
50 : USD 0.6991
100 : USD 0.6613
200 : USD 0.6235
300 : USD 0.5857
400 : USD 0.548

0
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 2.4815
10 : USD 0.9264
100 : USD 0.7005
500 : USD 0.5951
1000 : USD 0.4886
2500 : USD 0.4557
5000 : USD 0.4359
10000 : USD 0.4216

   
Manufacturer
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We are delighted to provide the TK8R2A06PL,S4X from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK8R2A06PL,S4X and other electronic components in the MOSFETs category and beyond.

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TK8R2A06PL MOSFETs Silicon N-channel MOS (U-MOS-H) TK8R2A06PL 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: Q = 10 nC (typ.) SW (3) Small output charge: Q = 23 nC (typ.) oss (4) Low drain-source on-resistance: R = 6.1 m (typ.) (V = 10 V) DS(ON) GS (5) Low leakage current: I = 10 A (max) (V = 60 V) DSS DS (6) Enhancement mode: V = 1.5 to 2.5 V (V = 10 V, I = 0.3 mA) th DS D 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS Start of commercial production 2016-10 2016-2021 2021-01-27 1 Toshiba Electronic Devices & Storage Corporation Rev.4.0TK8R2A06PL 4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified) a Characteristics Symbol Rating Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 GSS Drain current (DC) (T = 25 ) (Note 1) I 50 A c D Drain current (pulsed) (t = 100 s) (Note 1) I 260 A DP Power dissipation (T = 25 ) P 36 W c D Single-pulse avalanche energy (Note 2) E 32 mJ AS Single-pulse avalanche current (Note 2) I 50 A AS Channel temperature T 175 ch Storage temperature T -55 to 175 stg Isolation voltage (RMS) (t = 1.0 s) V 2000 V ISO(RMS) Mounting torque TOR 0.6 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance (T = 25 ) R 4.16 /W c th(ch-c) Channel-to-ambient thermal resistance (T = 25 ) R 62.5 a th(ch-a) Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: V = 48 V, T = 25 (initial), L = 10 H, I = 50 A DD ch AS Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2016-2021 2021-01-27 2 Toshiba Electronic Devices & Storage Corporation Rev.4.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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