MOSFET N-Channel, SUPERFET II, EasyDrive 600 V, 77 A, 41 m FCH041N60E Description SuperFET II MOSFET is ON Semiconductors brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate V R MAX I MAX charge performance. This technology is tailored to minimize DSS DS(ON) D conduction loss, provide superior switching performance, dv/dt rate 600 V 77 A 41 m and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to D the SuperFET II MOSFET series. Noted by the E part number suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series. G Features 650 V T = 150C J S Typ. R = 36 m DS(on) N-Channel MOSFET Ultra Low Gate Charge (Typ. Q = 285 nC) g Low Effective Output Capacitance (Typ. C = 735 pF) oss(eff.) 100% Avalanche Tested An Integrated Gate Resistor This Device is PbFree and is RoHS Compliant G D S Applications TO247 LCD/LED/PDP TV Lighting CASE 340CK Solar Inverter ACDC Power Supply MARKING DIAGRAM Y&Z&3&K FCH 041N60E Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot Code FCH041N60E = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: July, 2020 Rev. 3 FCH041N60E/DFCH041N60E ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise specified) C Symbol Parameter Value Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage DC 20 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 77 A D C Continuous (T = 100C) 48.7 C I Drain Current Pulsed (Note 1) 231 A DM E Single Pulsed Avalanche Energy (Note 2) 2025 mJ AS I Avalanche Current (Note 1) 15 A AS E Repetitive Avalanche Energy (Note 1) 5.92 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 592 W D C Derate Above 25C 4.74 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 s 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. I = 15 A, R = 25 , starting T = 25C. AS G J 3. I 39 A, di/dt 200 A/ s, V 380 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 0.21 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCH041N60E FCH041N60E TO247 Tube N/A N/A 30 Units www.onsemi.com 2