X-On Electronics has gained recognition as a prominent supplier of TK8A65D(STA4,Q,M) MOSFETs across the USA, India, Europe, Australia, and various other global locations. TK8A65D(STA4,Q,M) MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TK8A65D(STA4,Q,M) Toshiba

Hot TK8A65D(STA4,Q,M) electronic component of Toshiba
TK8A65D(STA4,Q,M) Toshiba
TK8A65D(STA4,Q,M) MOSFETs
TK8A65D(STA4,Q,M)  Semiconductors

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Part No. TK8A65D(STA4,Q,M)
Manufacturer: Toshiba
Category: MOSFETs
Description: Toshiba MOSFET N-Ch FET 650V 4.5s IDSS 10 uA 0.7 Ohm
Datasheet: TK8A65D(STA4,Q,M) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8712 ea
Line Total: USD 0.87 
Availability - 31
Ship by Fri. 18 Apr to Wed. 23 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
31
Ship by Fri. 18 Apr to Wed. 23 Apr
MOQ : 1
Multiples : 1
1 : USD 0.8712
10 : USD 0.7131
50 : USD 0.5373
100 : USD 0.408
500 : USD 0.3742
1000 : USD 0.3587

55
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 2.8412
10 : USD 2.0911
50 : USD 1.7023
100 : USD 1.3086
500 : USD 1.0852
1000 : USD 1.0288

   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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We are delighted to provide the TK8A65D(STA4,Q,M) from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TK8A65D(STA4,Q,M) and other electronic components in the MOSFETs category and beyond.

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TK8A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS) TK8A65D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: R = 0.7 (typ.) DS (ON) High forward transfer admittance: Y = 4.5 S (typ.) fs Low leakage current: I = 10 A (max) (V = 650 V) DSS DS Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 1 mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 650 V DSS Gate-source voltage V 30 V GSS DC (Note 1) I 8 D Drain current A 1: Gate Pulse (Note 1) I 32 DP 2: Drain 3: Source Drain power dissipation (Tc = 25C) P 45 W D Single pulse avalanche energy E 416 mJ AS (Note 2) JEDEC Avalanche current I 8 A AR JEITA SC-67 Repetitive avalanche energy (Note 3) E 4.5 mJ AR TOSHIBA 2-10U1B Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Symbol Max Unit Thermal resistance, channel to case R 2.78 C/W th (ch-c) Thermal resistance, channel to ambient R 62.5 C/W th (ch-a) 1 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: V = 90 V, T = 25C (initial), L = 11.5 mH, R = 25 , I = 8 A DD ch G AR Note 3: Repetitive rating: pulse width limited by maximum channel temperature 3 This transistor is an electrostatic-sensitive device. Handle with care. Start of commercial production 2009-01 1 2013-11-01 TK8A65D Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 30 V, V = 0 V 1 A GSS GS DS Drain cut-off current I V = 650 V, V = 0 V 10 A DSS DS GS Drain-source breakdown voltage V I = 10 mA, V = 0 V 650 V (BR) DSS D GS Gate threshold voltage V V = 10 V, I = 1 mA 2.0 4.0 V th DS D Drain-source ON-resistance R V = 10 V, I = 4 A 0.7 0.84 DS (ON) GS D Forward transfer admittance Y V = 10 V, I = 4 A 1.3 4.5 S fs DS D Input capacitance C 1350 iss V = 25 V, V = 0 V, f = 1 MHz pF Reverse transfer capacitance C 6 rss DS GS Output capacitance C 135 oss Rise time t 22 r 10 V I = 4 A V D OUT V GS 0 V Turn-on time t 55 on R = 50 L Switching time ns 50 Fall time t 15 f V 200 V DD Turn-off time t 100 off Duty 1%, t = 10 s w Total gate charge Q 25 g V 400 V, V = 10 V, I = 8 A 16 nC Gate-source charge Q gs DD GS D Gate-drain charge Q 9 gd Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Continuous drain reverse current I 8 A DR (Note 1) Pulse drain reverse current (Note 1) I 32 A DRP Forward voltage (diode) V I = 8 A, V = 0 V 1.7 V DSF DR GS Reverse recovery time t I = 8 A, V = 0 V, 1300 ns rr DR GS dI /dt = 100 A/s Reverse recovery charge Q 12 C rr DR Marking Note 4 : A line under a Lot No. identifies the indication of product Labels G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to Part No. environmental matters such as the RoHS compatibility of Product. (or abbreviation code) The RoHS is Directive 2011/65/EU of the European Parliament and K8A65D Lot No. of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment Note 4 2 2013-11-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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