MDD1951 Single N-Channel Trench MOSFET 60V MDD1951 Single N-Channel Trench MOSFET 60V, 17.9A, 45.0m General Description Features The MDD1951 uses advanced MagnaChips trench V = 60V DS MOSFET Technology to provide high performance in on- I = 17.9A V = 10V D GS state resistance, switching performance and reliability RDS(ON) Low R , low gate charge can be offering superior < 45.0m V = 10V DS(ON) GS benefit in the application. < 55.0m V = 4.5V GS Applications Inverters General purpose applications D G S o Absolute Maximum Ratings (T =25 C unless otherwise noted) C Characteristics Symbol Rating Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS o T =25 C (a) 17.9 A C Continuous Drain Current (Note 2) I D o T =25 C (b) 4.4 A A Pulsed Drain Current I 80 A DM o T =25 C 32.8 C Power Dissipation for Single Operation P W D o T =25 C 2.0 A Single Pulse Avalanche Energy (Note 3) E 50 mJ AS o Junction and Storage Temperature Range T , T -55~+150 C J stg Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient(Steady-State) (Note 1) R 60 JA o C/W Thermal Resistance, Junction-to-Case R 3.8 JC December 2009. Version 1.1 MagnaChip Semiconductor Ltd. 1 MDD1951 Single N-Channel Trench MOSFET 60V Ordering Information Part Number Temp. Range Package Packing RoHS Status o MDD1951RH -55~150 C TO-252 Tape & Reel Halogen Free o Electrical Characteristics (T =25 C unless otherwise noted) J Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 250A, V = 0V 60 - - DSS D GS V Gate Threshold Voltage V V = V , I = 250A 1.0 2.0 3.0 GS(th) DS GS D Zero Gate Voltage Drain Current I V = 60V, V = 0V - - 1 DSS DS GS A Gate Leakage Current I V = 20V, V = 0V - - 0.1 GSS GS DS V = 10V, I = 17A - 36 45 GS D Drain-Source ON Resistance R m DS(ON) V = 4.5V, I = 12A - 44 55 GS D Forward Transconductance g V = 5V, I = 17A - 26 - S FS DS D Dynamic Characteristics Total Gate Charge Q - 4.8 - g Gate-Source Charge Q V = 30V, I = 17A, V = 4.5V - 1.6 - nC gs DS D GS Gate-Drain Charge Q - 2.2 - gd Input Capacitance C - 470 - iss Reverse Transfer Capacitance C V = 30V, V = 0V, f = 1.0MHz - 32 - pF rss DS GS Output Capacitance C - 70 - oss Turn-On Delay Time t - 7.4 - d(on) Turn-On Rise Time t - 15.2 - r V = 10V ,V = 30V, I = 17A , GS DS D ns RGEN = 5 Turn-Off Delay Time t - 21.2 - d(off) Turn-Off Fall Time t - 7.6 - f Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V I = 5A, V = 0V - 0.8 1.2 V SD S GS Body Diode Reverse Recovery Time t - 29 - ns rr I = 17A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q - 32 - nC rr Note : 1. Surface mounted RF4 board with 2oz. Copper. 2. P is based on T =150C D J(MAX) a. P (T =25C) is based on R , D C JC b. P (T =25C) is based on R t<10sec D A JA, 3. Starting T =25C, L=1mH, I =10.0A, V =60V, V =10V J AS DD GS December 2009. Version 1.1 MagnaChip Semiconductor Ltd. 2