X-On Electronics has gained recognition as a prominent supplier of MDD1951RH MOSFETs across the USA, India, Europe, Australia, and various other global locations. MDD1951RH MOSFETs are a product manufactured by Magnachip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MDD1951RH Magnachip

MDD1951RH electronic component of Magnachip
MDD1951RH Magnachip
MDD1951RH MOSFETs
MDD1951RH  Semiconductors

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See Product Specifications
Part No. MDD1951RH
Manufacturer: Magnachip
Category: MOSFETs
Description: Trans MOSFET N-CH 60V 4.4A 3-Pin (2+Tab) TO-252 T/R
Datasheet: MDD1951RH Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
124: USD 0.1315 ea
Line Total: USD 16.31 
Availability - 0
MOQ: 124  Multiples: 124
Pack Size: 124
Availability Price Quantity
0
Ship by Mon. 21 Apr to Thu. 24 Apr
MOQ : 100
Multiples : 1
100 : USD 0.1672
500 : USD 0.1614
3000 : USD 0.1549
15000 : USD 0.1517

0
Ship by Mon. 14 Apr to Fri. 18 Apr
MOQ : 124
Multiples : 124
124 : USD 0.1315

   
Manufacturer
Product Category
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Operating Temperature Classification
Operating Temp Range
Drain-Source On-Volt
Number Of Elements
Package Type
Pin Count
Gate-Source Voltage Max
Rad Hardened
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We are delighted to provide the MDD1951RH from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MDD1951RH and other electronic components in the MOSFETs category and beyond.

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MDD1951 Single N-Channel Trench MOSFET 60V MDD1951 Single N-Channel Trench MOSFET 60V, 17.9A, 45.0m General Description Features The MDD1951 uses advanced MagnaChips trench V = 60V DS MOSFET Technology to provide high performance in on- I = 17.9A V = 10V D GS state resistance, switching performance and reliability RDS(ON) Low R , low gate charge can be offering superior < 45.0m V = 10V DS(ON) GS benefit in the application. < 55.0m V = 4.5V GS Applications Inverters General purpose applications D G S o Absolute Maximum Ratings (T =25 C unless otherwise noted) C Characteristics Symbol Rating Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS o T =25 C (a) 17.9 A C Continuous Drain Current (Note 2) I D o T =25 C (b) 4.4 A A Pulsed Drain Current I 80 A DM o T =25 C 32.8 C Power Dissipation for Single Operation P W D o T =25 C 2.0 A Single Pulse Avalanche Energy (Note 3) E 50 mJ AS o Junction and Storage Temperature Range T , T -55~+150 C J stg Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient(Steady-State) (Note 1) R 60 JA o C/W Thermal Resistance, Junction-to-Case R 3.8 JC December 2009. Version 1.1 MagnaChip Semiconductor Ltd. 1 MDD1951 Single N-Channel Trench MOSFET 60V Ordering Information Part Number Temp. Range Package Packing RoHS Status o MDD1951RH -55~150 C TO-252 Tape & Reel Halogen Free o Electrical Characteristics (T =25 C unless otherwise noted) J Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV I = 250A, V = 0V 60 - - DSS D GS V Gate Threshold Voltage V V = V , I = 250A 1.0 2.0 3.0 GS(th) DS GS D Zero Gate Voltage Drain Current I V = 60V, V = 0V - - 1 DSS DS GS A Gate Leakage Current I V = 20V, V = 0V - - 0.1 GSS GS DS V = 10V, I = 17A - 36 45 GS D Drain-Source ON Resistance R m DS(ON) V = 4.5V, I = 12A - 44 55 GS D Forward Transconductance g V = 5V, I = 17A - 26 - S FS DS D Dynamic Characteristics Total Gate Charge Q - 4.8 - g Gate-Source Charge Q V = 30V, I = 17A, V = 4.5V - 1.6 - nC gs DS D GS Gate-Drain Charge Q - 2.2 - gd Input Capacitance C - 470 - iss Reverse Transfer Capacitance C V = 30V, V = 0V, f = 1.0MHz - 32 - pF rss DS GS Output Capacitance C - 70 - oss Turn-On Delay Time t - 7.4 - d(on) Turn-On Rise Time t - 15.2 - r V = 10V ,V = 30V, I = 17A , GS DS D ns RGEN = 5 Turn-Off Delay Time t - 21.2 - d(off) Turn-Off Fall Time t - 7.6 - f Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V I = 5A, V = 0V - 0.8 1.2 V SD S GS Body Diode Reverse Recovery Time t - 29 - ns rr I = 17A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q - 32 - nC rr Note : 1. Surface mounted RF4 board with 2oz. Copper. 2. P is based on T =150C D J(MAX) a. P (T =25C) is based on R , D C JC b. P (T =25C) is based on R t<10sec D A JA, 3. Starting T =25C, L=1mH, I =10.0A, V =60V, V =10V J AS DD GS December 2009. Version 1.1 MagnaChip Semiconductor Ltd. 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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