Ordering number : ENA1395A ATP206 N-Channel Power MOSFET ATP206 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 40 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =40V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.5 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =20A 915 S DS D R (on)1 I =20A, V =10V 12 16 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =10A, V =4.5V 20 28 m DS D GS Input Capacitance Ciss 1630 pF Output Capacitance Coss V =20V, f=1MHz 205 pF DS Reverse Transfer Capacitance Crss 110 pF Turn-ON Delay Time t (on) 19 ns d Rise Time t 110 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 83 ns d Fall Time t 73 ns f Total Gate Charge Qg 27 nC Gate-to-Source Charge Qgs V =20V, V =10V, I =40A 7.0 nC DS GS D Gate-to-Drain Miller Charge Qgd 5.2 nC Diode Forward Voltage V I =40A, V =0V 0.99 1.2 V SD S GS Switching Time Test Circuit V V =20V IN DD 10V 0V I =20A D V IN R =1 L D V OUT PW=10s D.C.1% G ATP206 P.G 50 S Ordering Information Device Package Shipping memo ATP206-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1395-2/7