AUTOMOTIVE GRADE AUIRF1324S-7P Features V 24V DSS Advanced Process Technology R typ. 0.8m DS(on) Ultra Low On-Resistance max. 175C Operating Temperature 1.0m Fast Switching I 429A D (Silicon Limited) Repetitive Avalanche Allowed up to Tjmax I 240A D (Package Limited) Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of 2 this design are a 175C junction operating temperature, fast S (Pin 2, 3, 5, 6, 7) D Pak 7 Pin G (Pin 1) switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and G D S reliable device for use in Automotive applications and wide variety of other applications. Gate Drain Source Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity 2 AUIRF1324S-7P D Pak 7 Pin Tube 50 AUIRF1324S-7P Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 429 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 303 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 240 D C GS I Pulsed Drain Current 1640 DM P T = 25C Maximum Power Dissipation 300 W D C Linear Derating Factor 2.0 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 230 mJ AS I Avalanche Current See Fig.14,15, 18a, 18b A AR E Repetitive Avalanche Energy mJ AR dv/dt Peak Diode Recovery 1.6 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.50 R JC C/W Junction-to-Ambient 40 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-9-30 AUIRF1324S-7P Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 24 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.023 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.80 1.0 m V = 10V, I = 160A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 190 S V = 15V, I = 160A DS D R Gate Resistance 3.0 G 20 V =24V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V =19V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Total Gate Charge 180 252 Q I = 75A g D Q Gate-to-Source Charge 47 V = 12V gs DS nC Q Gate-to-Drain Charge 58 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q) 122 sync g gd t Turn-On Delay Time 19 V = 16V d(on) DD t Rise Time 240 I = 160A r D ns t Turn-Off Delay Time 86 R = 2.7 d(off) G t Fall Time 93 V = 10V f GS C Input Capacitance 7700 V = 0V iss GS C Output Capacitance 3380 V = 19V oss DS C Reverse Transfer Capacitance 1930 = 1.0MHz, See Fig. 5 rss pF C Effective Output Capacitance (Energy Related) 4780 V = 0V, V = 0V to 19V oss eff.(ER) GS DS C Effective Output Capacitance (Time Related) 4970 V = 0V, V = 0V to 19V oss eff.(TR) GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 429 S (Body Diode) showing the A Pulsed Source Current integral reverse I 1640 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 160A,V = 0V SD J S GS 71 107 T = 25C V = 20V J DD t Reverse Recovery Time ns rr 74 110 T = 125C I = 160A, J F 83 120 T = 25C di/dt = 100A/s J Q Reverse Recovery Charge nC rr 92 140 T = 125C J I Reverse Recovery Current 2.0 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) S D on Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. Repetitive rating pulse width limited by max. junction temperature. Limited by T starting T = 25C, L = 0.018mH, R = 25 , I = 160A, V =10V. Part not recommended for use above Jmax, J G AS GS this value. I 160A, di/dt 600A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C. J 2 2015-9-30