Ordering number : ENA1457A ATP301 P-Channel Power MOSFET ATP301 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --100 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--100V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --2.0 --3.5 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--14A 32 S DS D Static Drain-to-Source On-State Resistance R (on) I =--14A, V =--10V 57 75 m DS D GS Input Capacitance Ciss 4000 pF Output Capacitance Coss V =--20V, f=1MHz 270 pF DS Reverse Transfer Capacitance Crss 150 pF Turn-ON Delay Time t (on) 32 ns d Rise Time t 130 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 330 ns d Fall Time t 190 ns f Total Gate Charge Qg 73 nC Gate-to-Source Charge Qgs V =--60V, V =--10V, I =--28A 16 nC DS GS D Gate-to-Drain Miller Charge Qgd 14 nC Diode Forward Voltage V I =--28A, V =0V --1.0 --1.5 V SD S GS Switching Time Test Circuit Avalanche Resistance Test Circuit V V = --60V DD IN 0V L --10V 50 I = --14A D V RG IN R =4.3 L D V OUT PW=10s ATP301 D.C.1% 0V V 50 DD G --10V ATP301 P.G 50 S Ordering Information Device Package Shipping memo ATP301-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1457-2/7