ATP401-TL-H ON Semiconductor

Ordering number : ENA2167 ATP401 N-Channel Power MOSFET ATP401 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =60V, V =0V 10 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =50A 90 S DS D R (on)1 I =50A, V =10V 2.8 3.7 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =50A, V =4.5V 3.7 5.2 m DS D GS Input Capacitance Ciss 17000 pF Output Capacitance Coss V =20V, f=1MHz 1000 pF DS Reverse Transfer Capacitance Crss 770 pF Turn-ON Delay Time t (on) 110 ns d Rise Time t 580 ns r See Fig.2 Turn-OFF Delay Time t (off) 840 ns d Fall Time t 710 ns f Total Gate Charge Qg 300 nC Gate-to-Source Charge Qgs V =36V, V =10V, I =100A 60 nC DS GS D Gate-to-Drain Miller Charge Qgd 60 nC Diode Forward Voltage V I =100A, V =0V 0.9 1.2 V SD S GS Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit V V =36V IN DD D L 10V 0V I =50A 50 D G V R =0.72 IN L D V OUT PW10s 10V S D.C.1% V 50 DD 0V G ATP401 P.G S 50 ATP401 Ordering Information Device Package Shipping memo ATP401-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A2167-2/7