IRFR120, IRFU120, SiHFR120, SiHFU120 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Dynamic dV/dt rating DPAK IPAK Repetitive avalanche rated (TO-252) (TO-251) Surface-mount (IRFR120, SiHFR120) D Straight lead (IRFU120, SiHFU120) D G Available in tape and reel Available Fast switching S G S Ease of paralleling D G S Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc 99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the PRODUCT SUMMARY designer with the best combination of fast switching, V (V) 100 DS ruggedized device design, low on-resistance and R ()V = 10 V 0.27 DS(on) GS cost-effectiveness. Q max. (nC) 16 g The DPAK is designed for surface mounting using vapor Q (nC) 4.4 gs phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole Q (nC) 7.7 gd mounting applications. Power dissipation levels up to 1.5 W Configuration Single are possible in typical surface mount applications. ORDERING INFORMATION PACKAGE DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) a a a SiHFR120-GE3 SiHFR120TR-GE3 SiHFR120TRR-GE3 SiHFR120TRL-GE3 SiHFU120-GE3 Lead (Pb)-free IRFR120PbF-BE3 IRFR120TRPbF-BE3 IRFR120TRRPbF-BE3 IRFR120TRLPbF-BE3 and halogen-free - b ab ab ab a a a Lead (Pb)-free IRFR120PbF IRFR120TRPbF IRFR120TRRPbF IRFR120TRLPbF IRFU120PbF Notes a. See device orientation b. -BE3 denotes alternate manufacturing location ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 100 DS V Gate-source voltage V 20 GS T = 25 C 7.7 C at 10 V I Continuous drain current V GS D T = 100 C 4.9 A C a Pulsed drain current I 31 DM Linear derating factor 0.33 W/C e Linear derating factor (PCB mount) 0.020 b Single pulse avalanche energy E 210 mJ AS a Repetitive avalanche Current I 7.7 A AR a Repetitive avalanche Energy E 4.2 mJ AR Maximum power dissipation T = 25 C 42 C P W D e Maximum power dissipation (PCB mount) T = 25 C 2.5 A c Peak diode recovery dV/dt dV/dt 5.5 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 5.3 mH, R = 25 , I = 7.7 A (see fig. 12). DD J g AS c. I 9.2 A, dI/dt 110 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S21-0466-Rev. D, 17-May-2021 Document Number: 91266 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFR120, IRFU120, SiHFR120, SiHFU120 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum junction-to-ambient R - - 110 thJA a Maximum junction-to-ambient (PCB mount) R -- 50 C/W thJA Maximum junction-to-case (drain) R -- 3.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 100 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.13 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 80 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 4.6 A - - 0.27 DS(on) GS D Forward transconductance g V = 50 V, I = 4.6 A 1.6 - - S fs DS D Dynamic Input capacitance C - 360 - iss V = 0 V, GS Output capacitance C -V = 25 V, 150- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -34- rss Total gate charge Q -- 16 g I = 9.2 A, V = 80 V, D DS Gate-source charge Q --V = 10 V 4.4 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --7.7 gd Turn-on delay time t -6.8 - d(on) Rise time t -27 - r V = 50 V, I = 9.2 A, DD D ns b R = 18 , R = 5.2 , see fig. 10 Turn-off delay time t -1g D 8- d(off) Fall time t -17- f Internal drain inductance R f = 1 MHz, open drain 1.0 - 5.0 g D Internal source inductance L Between lead, -4.5 - D 6 mm (0.25 ) from nH G package and center of Input capacitance L -7.5 - S die contact S Drain-source body diode characteristics MOSFET symbol D Continuous source-drain diode current I -- 7.7 S showing the A G integral reverse a Pulsed diode forward current I -- 31 SM S p - n junction diode b Body diode voltage V T = 25 C, I = 7.7 A, V = 0 V -- 2.5 V SD J S GS Body diode reverse recovery time t - 130 260 ns rr b T = 25 C, I = 9.2 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q - 0.65 1.3 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S21-0466-Rev. D, 17-May-2021 Document Number: 91266 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000