X-On Electronics has gained recognition as a prominent supplier of IRF730STRLPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF730STRLPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF730STRLPBF Vishay

IRF730STRLPBF electronic component of Vishay
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Part No.IRF730STRLPBF
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N-Chan 400V 5.5 Amp
Datasheet: IRF730STRLPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.013 ea
Line Total: USD 3.01 
Availability - 605
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
605
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 3.013
500 : USD 2.6565
800 : USD 1.449
2400 : USD 1.265

   
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We are delighted to provide the IRF730STRLPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF730STRLPBF and other electronic components in the MOSFETs category and beyond.

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IRF730S, SiHF730S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) 400 DS Definition Surface Mount R ( )V = 10 V 1.0 DS(on) GS Available in Tape and Reel Q (Max.) (nC) 38 g Dynamic dV/dt Rating Q (nC) 5.7 gs Repetitive Avalanche Rated Q (nC) 22 gd Fast Switching Ease of Paralleling Configuration Single Simple Drive Requirements D Compliant to RoHS Directive 2002/95/EC DESCRIPTION 2 D PAK (TO-263) Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, K ruggedized device design, low on-resistance and G cost-effectiveness. 2 The D PAK (TO-263) is a surface mount power package S capable of accommodating die size up to HEX-4. It provides D the highest power capability and the lowest possible S G on-resistance in any existing surface mount package. The 2 N-Channel MOSFET D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) a a Lead (Pb)-free and Halogen-free SiHF730S-GE3 SiHF730STRL-GE3 SiHF730STRR-GE3 a IRF730SPbF IRF730STRLPbF - a Lead (Pb)-free SiHF730S-E3 SiHF730STL-E3 - a SiHF730S-E3 SiHF730STL-E3 - Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 400 DS V Gate-Source Voltage V 20 GS T = 25 C 5.5 C Continuous Drain Current V at 10 V I GS D T = 100 C 3.5 A C a Pulsed Drain Current I 22 DM Linear Derating Factor 0.59 W/C e Linear Derating Factor (PCB Mount) 0.025 b Single Pulse Avalanche Energy E 290 mJ AS a Avalanche Current I 5.5 A AR a Repetitive Avalanche Energy E 7.4 mJ AR Maximum Power Dissipation T = 25 C 74 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 3.1 A c Peak Diode Recovery dV/dt dV/dt 4.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 16 mH, R = 25 , I = 5.5 A (see fig. 12). DD J g AS c. I 5.5 A, dI/dt 90 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91048 www.vishay.com S11-1048-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF730S, SiHF730S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Maximum Junction-to-Ambient R -40 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -1.7 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 400 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.54 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 320 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 3.3 A -- 1.0 DS(on) GS D b Forward Transconductance g V = 50 V, I = 3.3 A 2.9 - - S fs DS D Dynamic Input Capacitance C - 700 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 170- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -64- rss Total Gate Charge Q -- 38 g I = 3.5 A, V = 320 V, D DS Gate-Source Charge Q --V = 10 V 5.7 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --22 gd Turn-On Delay Time t -10 - d(on) Rise Time t -15 - r V = 200 V, I = 3.5 A, DD D ns b R = 12 , R = 57 , see fig. 10 g D Turn-Off Delay Time t -38- d(off) Fall Time t -14- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -7.5 - die contact S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 5.5 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- 22 SM S b Body Diode Voltage V T = 25 C, I = 5.5 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 270 530 ns rr b T = 25 C, I = 3.5 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.8 2.2 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91048 2 S11-1048-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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