X-On Electronics has gained recognition as a prominent supplier of IRF740ALPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF740ALPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF740ALPBF Vishay

Hot IRF740ALPBF electronic component of Vishay
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Part No.IRF740ALPBF
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 400 V 10A (Tc) 3.1W (Ta), 125W (Tc) Through Hole I2PAK
Datasheet: IRF740ALPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.3178 ea
Line Total: USD 1.59 
Availability - 10
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
1586
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.299
10 : USD 1.683
100 : USD 1.375
1000 : USD 1.364

957
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.226
10 : USD 1.988
11 : USD 1.624
29 : USD 1.54
1000 : USD 1.484

10
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 5
Multiples : 1
5 : USD 0.3178

   
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We are delighted to provide the IRF740ALPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF740ALPBF and other electronic components in the MOSFETs category and beyond.

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IRF740AS, SiHF740AS, IRF740AL, SiHF740AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) 400 Definition DS R ( )V = 10 V 0.55 Low Gate Charge Q Results in Simple Drive g DS(on) GS Requirement Q (Max.) (nC) 36 g Improved Gate, Avalanche and Dynamic dV/dt Q (nC) 9.9 gs Ruggedness Q (nC) 16 gd Fully Characterized Capacitance and Configuration Single Avalanche Voltage and Current D Effective C specified oss 2 2 Compliant to RoHS Directive 2002/95/EC I PAK (TO-262) D PAK (TO-263) APPLICATIONS Switch Mode Power Supply (SMPS) G Uninterruptible Power Supply G D S High speed Power Switching D S G TYPICAL SMPS TOPOLOGIES S Single Transistor Flyback Xfmr. Reset Single Transistor Forward Xfmr. Reset (Both for US Line N-Channel MOSFET Input Only) ORDERING INFORMATION 2 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) I PAK (TO-262) a a Lead (Pb)-free and Halogen-free SiHF740AS-GE3 SiHF740ASTRL-GE3 SiHF740ASTRR-GE3 SiHF740AL-GE3 a a IRF740ASPbF IRF740ASTRLPbF IRF740ASTRRPbF IRF740ALPbF Lead (Pb)-free a a SiHF740AS-E3 SiHF740ASTL-E3 SiHF740ASTR-E3 SiHF740AL-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 400 DS V Gate-Source Voltage V 30 GS T = 25 C 10 C e Continuous Drain Current V at 10 V I GS D T = 100 C 6.3 A C a, e Pulsed Drain Current I 40 DM Linear Derating Factor 1.0 W/C b, e Single Pulse Avalanche Energy E 630 mJ AS a Avalanche Current I 10 A AR a Repetiitive Avalanche Energy E 12.5 mJ AR T = 25 C 3.1 A Maximum Power Dissipation P W D T = 25 C 125 C c, e Peak Diode Recovery dV/dt dV/dt 5.9 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 12.6 mH, R = 25 , I = 10 A (see fig. 12). J g AS c. I 10 A, dI/dt 330 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. Uses IRF740A, SiHF740A data and test conditions. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91052 www.vishay.com S11-1048-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF740AS, SiHF740AS, IRF740AL, SiHF740AL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient (PCB R -40 a thJA Mounted, Steady-State) C/W Maximum Junction-to-Case (Drain) R -1.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 400 - - V DS GS D d V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.48 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 320 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 6.0 A - - 0.55 DS(on) GS D d Forward Transconductance g V = 50 V, I = 6.0 A 4.9 - - S fs DS D Dynamic Input Capacitance C - 1030 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 170- oss DS d f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -7.7- rss pF V = 1.0 V, f = 1.0 MHz - 1490 - DS Output Capacitance C oss V = 0 V V = 320 V, f = 1.0 MHz - 52 - GS DS c, d Effective Output Capacitance C eff. V = 0 V to 320 V -61 - oss DS Total Gate Charge Q -- 36 g I = 10 A, V = 320 V, D DS Gate-Source Charge Q --V = 10 V 9.9 nC gs GS b, d see fig. 6 and 13 Gate-Drain Charge Q --16 gd Turn-On Delay Time t -10 - d(on) Rise Time t -35 - r V = 200 V, I = 10 A, DD D ns b, d R = 10 , R = 19.5 , see fig. 10 g D Turn-Off Delay Time t -24- d(off) Fall Time t -22- f Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 10 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- 40 SM S b Body Diode Voltage V T = 25 C, I = 10 A, V = 0 V -- 2.0 V SD J S GS Body Diode Reverse Recovery Time t - 240 360 ns rr b, d T = 25 C, I = 10 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.9 2.9 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80 % V . oss oss DS DS d. Uses IRF740A, SiHF740A data and test conditions. www.vishay.com Document Number: 91052 2 S11-1048-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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