IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 60 DS Available Logic-Level Gate Drive R ()V = 5.0 V 0.050 DS(on) GS RoHS* R Specified at V = 4 V and 5 V DS(on) GS COMPLIANT Q (Max.) (nC) 35 g 175 C Operating Temperature Q (nC) 7.1 gs Fast Switching Q (nC) 25 gd Ease of Paralleling Configuration Single Simple Drive Requirements D Compliant to RoHS Directive 2002/95/EC TO-220AB DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. S The TO-220AB package is universally preferred for all D S G commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance N-Channel MOSFET and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRLZ34PbF Lead (Pb)-free SiHLZ34-E3 IRLZ34 SnPb SiHLZ34 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 10 GS T = 25 C 30 C Continuous Drain Current V at 5 V I GS D T = 100 C 21 A C a Pulsed Drain Current I 110 DM Linear Derating Factor 0.59 W/C b Single Pulse Avalanche Energy E 128 mJ AS Maximum Power Dissipation T = 25 C P 88 W C D c Peak Diode Recovery dV/dt dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, Starting T = 25 C, L = 285 H, R = 25 , I = 30 A (see fig. 12). DD J g AS c. I 30 A, dI/dt 200 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91327 www.vishay.com S11-0520-Rev. C, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRLZ34, SiHLZ34 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.7 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.070 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 - GS(th) DS GS D 2.0 V Gate-Source Leakage I V = 10 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 48 V, V = 0 V, T = 150 C - - DS GS J 250 b V = 5.0 V I = 18 A -- GS D 0.050 Drain-Source On-State Resistance R DS(on) b V = 4.0 V I = 15 A -- GS D 0.070 b Forward Transconductance g V = 25 V, I = 18 A 12 - - fs DS D S Dynamic V = 0 V, Input Capacitance C - 1600 - GS iss Output Capacitance C -V = 25 V, 660- pF oss DS Reverse Transfer Capacitance C -f = 1.0 MHz, see fig. 5 170- rss Total Gate Charge Q -- 35 g I = 30 A, V = 48 V D DS Gate-Source Charge Q --V = 5.0 V 7.1 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --25 gd Turn-On Delay Time t -14 - d(on) Rise Time t - 170 - r V = 30 V, I = 30 A DD D ns Turn-Off Delay Time t -30- d(off) b R = 6.0 , R = 1.0 , see fig. 10 g D Fall Time t -56- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -7.5 - die contact S S Drain-Source Body Diode Characteristics MOSFET symbol D -- 30 Continuous Source-Drain Diode Current I S showing the A integral reverse G a Pulsed Diode Forward Current I - - 110 SM p - n junction diode S b Body Diode Voltage V -- SD T = 25 C, I = 30 A, V = 0 V 1.6 V J S GS Body Diode Reverse Recovery Time t - rr 120 180 ns b T = 25 C, I = 30 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - rr 0.70 1.3 C Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91327 2 S11-0520-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000