IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition V (V) 60 DS Surface Mount R ( )V = 5.0 V 0.028 DS(on) GS Available in Tape and Reel Q (Max.) (nC) 66 Dynamic dV/dt Rating g Logic-Level Gate Drive Q (nC) 12 gs R Specified at V = 4 V and 5 V DS(on) GS Q (nC) 43 gd 175 C Operating Temperature Fast Switching Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Third generation Power MOSFETs from Vishay provide the 2 D PAK (TO-263) designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G 2 The D PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest D possible on-resistance in any existing surface mount G S 2 package. The D PAK (TO-263) is suitable for high current S N-Channel MOSFET applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION 2 2 Package D PAK (TO-263) D PAK (TO-263) a Lead (Pb)-free and Halogen-free SiHLZ44S-GE3 SiHLZ44STRR-GE3 a IRLZ44SPbF IRLZ44STRRPbF Lead (Pb)-free a SiHLZ44S-E3 SiHLZ44STR-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 10 GS f T = 25 C 50 Continuous Drain Current C V at 5.0 V I GS D T = 100 C 36 A Continuous Drain Current C a Pulsed Drain Current I 200 DM Linear Derating Factor 1.0 W/C e Linear Derating Factor (PCB Mount) 0.025 b Single Pulse Avalanche Energy E 400 mJ AS Maximum Power Dissipation T = 25 C 150 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 3.7 A c Peak Diode Recovery dV/dt dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 179 H, R = 25 , I = 51 A (see fig. 12). DD J g AS c. I 51 A, dI/dt 250 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). f. Current limited by the package, (die current = 51 A). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91329 www.vishay.com S11-1055-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRLZ44S, SiHLZ44S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Maximum Junction-to-Ambient R -40 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -1.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 60 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.070 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-Source Leakage I V = 10 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 48 V, V = 0 V, T = 150 C - - 250 DS GS J b V = 5.0 V I = 31 A - - 0.028 GS D Drain-Source On-State Resistance R DS(on) b V = 4.0 V I = 25 A - - 0.039 GS D b Forward Transconductance g V = 25 V, I = 31 A 23 - - S fs DS D Dynamic Input Capacitance C - 3300 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 1200- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -200- rss Total Gate Charge Q -- 66 g I = 51 A, V = 48 V, D DS Gate-Source Charge Q --V = 5.0 V 12 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --43 gd Turn-On Delay Time t -17 - d(on) Rise Time t - 230 - r V = 30 V, I = 51 A, DD D ns b R = 4.6 , R = 0.56 , see fig. 10 g D Turn-Off Delay Time t -42- d(off) Fall Time t -110- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol c D Continuous Source-Drain Diode Current I -- 50 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode - - 200 SM S b Body Diode Voltage V T = 25 C, I = 51 A, V = 0 V -- 2.5 V SD J S GS Body Diode Reverse Recovery Time t - 130 180 ns rr b T = 25 C, I = 51 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.84 1.3 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. Current limited by the package, (Die Current = 51 A). www.vishay.com Document Number: 91329 2 S11-1055-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000