V 900 V DS I 25C 36 A D C3M0065090D R 65 m DS(on) Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features Package C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Marking Part Number Package C3M0065090D TO-247-3 C3M0065090 Maximum Ratings (T = 25 C unless other wise specified) C Symbol Parameter Value Unit Test Conditions Note V = 0 V, I = 100 A V Drain - Source Voltage 900 V GS D DSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1 V GSmax Gate - Source Voltage (static) -4/+15 V Static Note: 2 V GSop 36 Fig. 19 V = 15 V, T = 25C GS C Continuous Drain Current A I D 23 V = 15 V, T = 100C GS C Pulsed Drain Current 90 A Fig. 22 I Pulse width t limited by T D(pulse) jmax P E Avalanche energy, Single pulse 110 mJ I = 22A, V = 50V D DD AS Power Dissipation 125 W T =25C, T = 150 C Fig. 20 P C J D -55 to Operating Junction and Storage Temperature C T , T J stg +150 Solder Temperature 260 C 1.6mm (0.063) from case for 10s T L 1 Nm Mounting Torque M3 or 6-32 screw M d 8.8 lbf-in Note (1): When using MOSFET Body Diode V = -4V/+19V GSmax Note (2): MOSFET can also safely operate at 0/+15 V 1 C3M0065090D Rev. B, 03-2017Electrical Characteristics (T = 25C unless other wise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain-Source Breakdown Voltage 900 V V = 0 V, I = 100 A (BR)DSS GS D 1.8 2.1 3.5 V VDS = VGS, ID = 5 mA V Gate Threshold Voltage Fig. 11 GS(th) 1.6 V V = V , I = 5 mA, T = 150C DS GS D J I Zero Gate Voltage Drain Current 1 100 A V = 900 V, V = 0 V DSS DS GS I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V GSS GS DS 65 78 VGS = 15 V, ID = 20 A Fig. 4, R Drain-Source On-State Resistance m DS(on) 5, 6 90 VGS = 15 V, ID = 20A, TJ = 150C 13.6 V = 20 V, I = 20 A DS DS g Transconductance S Fig. 7 fs 11.6 V = 20 V, I = 20 A, T = 150C DS DS J Ciss Input Capacitance 660 Fig. 17, VGS = 0 V, VDS = 600 V C Output Capacitance 60 oss pF 18 f = 1 MHz C Reverse Transfer Capacitance 4.0 rss AC V = 25 mV E C Stored Energy 16 J Fig. 16 oss oss E Turn-On Switching Energy (Body Diode FWD) 226 ON V = 400 V, V = -4 V/15 V, I = 20A, DS GS Fig. 26, D J Note 3 R = 2.5, L= 77 H, T = 150C J G(ext) E Turn Off Switching Energy (Body Diode FWD) 36 OFF td(on) Turn-On Delay Time 35 V = 400 V, V = -4 V/15 V DD GS tr Rise Time 11 I = 20 A, R = 2.5 , D G(ext) ns Fig. 27 Timing relative to V DS t Turn-Off Delay Time 23 d(off) Inductive load t Fall Time 9 f , R Internal Gate Resistance 4.7 f = 1 MHz V = 25 mV G(int) AC Q Gate to Source Charge 7.5 gs VDS = 400 V, VGS = -4 V/15 V Q Gate to Drain Charge 12 I = 20 A gd nC D Fig. 12 Per IEC60747-8-4 pg 21 Qg Total Gate Charge 30.4 (T = 25C unless other wise specified) Reverse Diode Characteristics C Symbol Parameter Typ. Max. Unit Test Conditions Note 4.8 V V = -4 V, I = 10 A GS SD Fig. 8, V Diode Forward Voltage SD 9, 10 4.4 V V = -4 V, I = 10 A, T = 150 C GS SD J I Continuous Diode Forward Current 23.5 A V = -4 V Note 1 S GS I Diode pulse Current 90 A Note 1 S, pulse V = -4 V, pulse width t limited by T jmax GS P t Reverse Recover time 35 ns rr V = -4 V, I = 20 A, V = 400 V GS SD R Note 1 Q Reverse Recovery Charge 150 nC rr dif/dt = 950 A/s, T = 150 C J I Peak Reverse Recovery Current 5.6 A rrm Thermal Characteristics Symbol Parameter Max. Unit Test Conditions Note R Thermal Resistance from Junction to Case 1.0 JC C/W Fig. 21 RJA Thermal Resistance From Junction to Ambient 40 Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode 2 C3M0065090D Rev. B, 03-2017