V 1000 V DS I 25C 32 A D C3M0065100J R 65 m DS(on) Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features Package TM C3M SiC MOSFET technology TAB Drain Low parasitic inductance with separate driver source pin 7mm of creepage distance between drain and source High blocking voltage with low On-resistance Fast intrinsic diode with low reverse recovery (Qrr) Low output capacitance (60pF) Halogen free, RoHS compliant Benefits Drain (TAB) 1 2 3 4 5 6 7 Reduce switching losses and minimize gate ringing G KS S S S S S Higher system efficiency Increase power density Increase system switching frequency Gate (Pin 1) Applications Driver Power Source Source (Pin 2) (Pin 3,4,5,6,7) Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Marking Part Number Package C3M0065100J TO-263-7 C3M0065100J Maximum Ratings (T = 25 C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note Drain - Source Voltage 1000 V V = 0 V, I = 100 A V GS D DSmax V Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note. 1 GSmax V Gate - Source Voltage (static) -4/+15 V Static Note. 2 GSop 32 Fig. 19 V = 15 V, T = 25C GS C I Continuous Drain Current A D 21 V = 15 V, T = 100C GS C I Pulsed Drain Current 90 A Fig. 22 D(pulse) Pulse width t limited by T jmax P Avalanche energy, Single pulse 110 mJ I = 22A, V = 50V E D DD AS P Power Dissipation 113.5 W T =25C, T = 150 C Fig. 20 C J D -55 to Operating Junction and Storage Temperature C T , T J stg +150 T Solder Temperature 260 C 1.6mm (0.063) from case for 10s L Note (1): When using MOSFET Body Diode V = -4V/+19V GSmax Note (2): MOSFET can also safely operate at 0/+15 V 1 C3M0065100J Rev. 1, 09-2020Electrical Characteristics (T = 25C unless otherwise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain-Source Breakdown Voltage 1000 V V = 0 V, I = 100 A (BR)DSS GS D 1.8 2.1 3.5 V VDS = VGS, ID = 5 mA V Gate Threshold Voltage Fig. 11 GS(th) 1.6 V V = V , I = 5 mA, T = 150C DS GS D J I Zero Gate Voltage Drain Current 1 100 A V = 1000 V, V = 0 V DSS DS GS I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V GSS GS DS 65 78 VGS = 15 V, ID = 20 A Fig. 4, R Drain-Source On-State Resistance m DS(on) 5, 6 95 VGS = 15 V, ID = 20A, TJ = 150C 14.3 V = 20 V, I = 20 A DS DS g Transconductance S Fig. 7 fs 11.9 V = 20 V, I = 20 A, T = 150C DS DS J Ciss Input Capacitance 760 Fig. 17, VGS = 0 V, VDS = 600 V C Output Capacitance 70 oss pF 18 f = 1 MHz C Reverse Transfer Capacitance 5 rss AC V = 25 mV E C Stored Energy 15 J Fig. 16 oss oss Fig. 26, E Turn-On Switching Energy (Body Diode FWD) 103 ON V = 700 V, V = -4 V/15 V, I = 20A, DS GS D J 30 R = 2.5, L= 130 H, T = 150C J G(ext) E Turn Off Switching Energy (Body Diode FWD) 30 Note. 3 OFF td(on) Turn-On Delay Time 7 V = 700 V, V = -4 V/15 V DD GS tr Rise Time 8 I = 20 A, R = 2.5 , D G(ext) ns Fig. 27 Timing relative to V DS t Turn-Off Delay Time 13 d(off) Inductive load t Fall Time 6 f , R Internal Gate Resistance 3.5 f = 1 MHz V = 25 mV G(int) AC Q Gate to Source Charge 9 gs VDS = 700 V, VGS = -4 V/15 V Q Gate to Drain Charge 9 I = 20 A gd nC D Fig. 12 Per IEC60747-8-4 pg 21 Qg Total Gate Charge 32 (T = 25C unless otherwise specified) Reverse Diode Characteristics C Symbol Parameter Typ. Max. Unit Test Conditions Note 4.5 V V = -4 V, I = 10 A GS SD Fig. 8, V Diode Forward Voltage SD 9, 10 4.2 V V = -4 V, I = 10 A, T = 150 C GS SD J I Continuous Diode Forward Current 22 A V = -4 V Note 1 S GS I Diode pulse Current 90 A Note 1 S, pulse V = -4 V, pulse width t limited by T jmax GS P t Reverse Recovery time 15 ns rr V = -4 V, I = 20 A, V = 700 V GS SD R Note 1 Q Reverse Recovery Charge 159 nC rr dif/dt = 4500 A/s, T = 150 C J I Peak Reverse Recovery Current 19 A rrm Thermal Characteristics Test Conditions Note Symbol Parameter Max. Unit R Thermal Resistance from Junction to Case 1.1 JC C/W Fig. 21 RJA Thermal Resistance From Junction to Ambient 40 Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode 2 C3M0065100J Rev. 1, 09-2020