V 900 V DS I 25C 11.5 A D C3M0280090D R 280 m DS(on) Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features Package C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Renewable energy Lighting High voltage DC/DC converters Telecom Power Supplies Marking Part Number Package Induction Heating C3M0280090D TO-247-3 C3M0280090 Maximum Ratings (T = 25 C unless other wise specified) C Symbol Parameter Value Unit Test Conditions Note Drain - Source Voltage 900 V V = 0 V, I = 100 A V GS D DSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1 V GSmax V Gate - Source Voltage (static) -4/+15 V Static Note: 2 GSop 11.5 Fig. 19 V = 15 V, T = 25C GS C I Continuous Drain Current A D 7.5 V = 15 V, T = 100C GS C I Pulsed Drain Current 22 A Fig. 22 Pulse width t limited by T D(pulse) jmax P Power Dissipation 54 W T =25C, T = 150 C Fig. 20 P C J D -55 to Operating Junction and Storage Temperature C T , T J stg +150 Solder Temperature 260 C 1.6mm (0.063) from case for 10s T L 1 Nm Mounting Torque M3 or 6-32 screw M d 8.8 lbf-in Note (1): When using MOSFET Body Diode V = -4V/+19V GSmax Note (2): MOSFET can also safely operate at 0/+15 V 1 C3M0280090D Rev. A , 03-2017Electrical Characteristics (T = 25C unless other wise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V Drain-Source Breakdown Voltage 900 V V = 0 V, I = 100 A (BR)DSS GS D 1.8 2.1 3.5 V VDS = VGS, ID = 1.2 mA V Gate Threshold Voltage Fig. 11 GS(th) 1.6 V V = V , I = 1.2 mA, T = 150C DS GS D J I Zero Gate Voltage Drain Current 1 100 A V = 900 V, V = 0 V DSS DS GS I Gate-Source Leakage Current 10 250 nA V = 15 V, V = 0 V GSS GS DS 280 360 VGS = 15 V, ID = 7.5 A Fig. 4, R Drain-Source On-State Resistance m DS(on) 5, 6 385 VGS = 15 V, ID = 7.5 A, TJ = 150C 3.6 V = 15 V, I = 7.5 A DS DS g Transconductance S Fig. 7 fs 3.1 V = 15 V, I = 7.5 A, T = 150C DS DS J Ciss Input Capacitance 150 Fig. 17, VGS = 0 V, VDS = 600 V C Output Capacitance 20 oss pF 18 f = 1 MHz C Reverse Transfer Capacitance 2 rss AC V = 25 mV E C Stored Energy 4.5 J Fig. 16 oss oss Fig. 26, E Turn-On Switching Energy (Body Diode FWD) 57 ON V = 400 V, V = -4 V/15 V, I = 7.5 A, DS GS D J 29 R = 2.5, L= 220 H, T = 150C J G(ext) E Turn Off Switching Energy (Body Diode FWD) 6 Note 3 OFF td(on) Turn-On Delay Time 26 V = 400 V, V = -4 V/15 V DD GS Fig. 27, tr Rise Time 10 I = 7.5 A, R = 2.5 , D G(ext) ns 29 Timing relative to V DS t Turn-Off Delay Time 17.5 d(off) Note 3 Inductive load t Fall Time 7.5 f , R Internal Gate Resistance 26 f = 1 MHz V = 25 mV G(int) AC Q Gate to Source Charge 2.8 gs VDS = 400 V, VGS = -4 V/15 V Q Gate to Drain Charge 3.4 I = 7.5 A gd nC D Fig. 12 Per IEC60747-8-4 pg 21 Qg Total Gate Charge 9.5 (T = 25C unless other wise specified) Reverse Diode Characteristics C Symbol Parameter Typ. Max. Unit Test Conditions Note 4.8 V V = -4 V, I = 4 A GS SD Fig. 8, V Diode Forward Voltage SD 9, 10 4.4 V V = -4 V, I = 4 A, T = 150 C GS SD J I Continuous Diode Forward Current 16.5 A V = -4 V Note 1 S GS I Diode pulse Current 22 A Note 1 S, pulse V = -4 V, pulse width t limited by T jmax GS P t Reverse Recover time 20 ns rr V = -4 V, I = 4 A, V = 400 V GS SD R Note 1 Q Reverse Recovery Charge 47 nC rr dif/dt = 600 A/s, T = 150 C J I Peak Reverse Recovery Current 3.4 A rrm Thermal Characteristics Symbol Parameter Max. Unit Test Conditions Note R Thermal Resistance from Junction to Case 2.3 JC C/W Fig. 21 RJA Thermal Resistance From Junction to Ambient 40 Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode 2 C3M0280090D Rev. A , 03-2017