High Voltage, High Gain V = 3000V IXBF20N300 CES TM BIMOSFET Monolithic I = 14A C110 Bipolar MOS Transistor V 3.2V CE(sat) (Electrically Isolated Tab) TM ISOPLUS i4-Pak Symbol Test Conditions Maximum Ratings V T = 25C to 150C 3000 V CES C 1 V T = 25C to 150C, R = 1M 3000 V CGR J GE 2 Isolated Tab 5 V Continuous 20 V GES V Transient 30 V GEM 1 = Gate 5 = Collector I T = 25C 34 A 2 = Emitter C25 C I T = 110C 14 A C110 C I T = 25C, 1ms 150 A CM C SSOA V = 15V, T = 125C, R = 20 I = 130 A GE VJ G CM (RBSOA) Clamped Inductive Load 1500 V P T = 25C 150 W C C Features T -55 ... +150 C J z T 150 C Silicon Chip on Direct-Copper Bond JM (DCB) Substrate T -55 ... +150 C stg z Isolated Mounting Surface z T 1.6mm (0.062 in.) from Case for 10s 300 C 4000V~ Electrical Isolation L T Plastic Body for 10 seconds 260 C z SOLD High Blocking Voltage z F Mounting Force 20..120 / 4.5..27 Nm/lb.in. High Peak Current Capability C z Low Saturation Voltage V 50/60Hz, 1 Minute 4000 V~ ISOL Weight 5 g Advantages z Low Gate Drive Requirement z High Power Density Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. Applications J BV I = 250A, V = 0V 3000 V z CES C GE Switch-Mode and Resonant-Mode V I = 250A, V = V 2.5 5.0 V Power Supplies GE(th) C CE GE z Uninterruptible Power Supplies (UPS) I V = 0.8 V , V = 0V 35 A CES CE CES GE z Laser Generators Note 2, T = 125C 1.5 mA J z Capacitor Discharge Circuits I V = 0V, V = 20V 100 nA z GES CE GE AC Switches V I = 20A, V = 15V, Note 1 2.7 3.2 V CE(sat) C GE T = 125C 3.2 V J 2012 IXYS CORPORATION, All Rights Reserved DS100125B(06/12) IXBF20N300 Symbol Test Conditions Characteristic Values TM ISOPLUS i4-Pak (HV) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 20A, V = 10V, Note 1 11 18 S fS C CE C 2230 pF ies C V = 25V, V = 0V, f = 1MHz 92 pF oes CE GE C 33 pF res Q 105 nC g Q I = 20A, V = 15V, V = 1000V 13 nC ge C GE CE Q 45 nC gc t 64 ns d(on) Resistive Switching Times, T = 25C J t 210 ns r Pin 1 = Gate I = 20A, V = 15V Pin2 = Emitter C GE t 300 ns Pin 3 = Collector d(off) Tab 4 = Isolated V = 1250V, R = 10 CE G t 504 ns f t 68 ns d(on) Resistive Switching Times, T = 125C J t 540 ns r I = 20A, V = 15V C GE t 300 ns d(off) V = 1250V, R = 10 CE G t 395 ns f R 0.83 C/W thJC R 0.15 C/W thCS Reverse Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J V I = 20A, V = 0V 2.1 V F F GE t I = 10A, V = 0V, -di /dt = 100A/ 1.35 s s rr F GE F I V = 100V, V = 0V 30 A RM R GE Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537