X-On Electronics has gained recognition as a prominent supplier of IRLZ34SPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRLZ34SPBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRLZ34SPBF Vishay

IRLZ34SPBF electronic component of Vishay
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Part No.IRLZ34SPBF
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 60V 5mOhms60V 30A N-Ch
Datasheet: IRLZ34SPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.618 ea
Line Total: USD 2.62 
Availability - 1325
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1325
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 2.618
10 : USD 1.452
100 : USD 1.331
500 : USD 1.133
1000 : USD 1.0989

   
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We are delighted to provide the IRLZ34SPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRLZ34SPBF and other electronic components in the MOSFETs category and beyond.

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IRLZ34S, SiHLZ34S www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Advanced process technology 2 Surface-mount D PAK (TO-263) 175 C operating temperature Available Fast switching G Fully avalanche rated Available Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 D G Note S S * This datasheet provides information about parts that are N-Channel MOSFET RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details PRODUCT SUMMARY DESCRIPTION V (V) 60 DS Third generation power MOSFETs from Vishay utilize R ( )V = 5 V 0.05 DS(on) GS advanced processing techniques to achieve extremely low Q max. (nC) 35 g on-resistance per silicon area. This benefit, combined with Q (nC) 7.1 gs the fast switching speed and ruggedized device design that Q (nC) 25 gd power MOSFETs are known for, provides the designer with Configuration Single an extremely efficient and reliable device for use in a wide variety of applications. 2 The D PAK (TO-263) is a surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount 2 package. The D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typica l surface-mount application. ORDERING INFORMATION 2 Package D PAK (TO-263) Lead (Pb)-free and halogen-free SiHLZ34S-GE3 Lead (Pb)-free IRLZ34SPbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 60 DS V Gate-source voltage V 10 GS T = 25 C 30 C Continuous drain current V at 5 V I GS D T = 100 C 21 A C a Pulsed drain current I 110 DM Linear derating factor 0.59 W/C b Single pulse avalanche energy E 128 mJ AS Maximum power dissipation T = 25 C 88 C P W D e Maximum power dissipation (PCB mount) T = 25 C 3.7 A c Peak diode recovery dv/dt dv/dt 4.5 V/ns Operating junction and storage temperature range T , T -55 to +175 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 285 H, R = 25 , I = 30 A (see fig. 12) DD J g AS c. I 30 A, di/dt 200 A/s, V V , T 175 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S20-0683-Rev. F, 07-Sep-2020 Document Number: 90418 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRLZ34S, SiHLZ34S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum junction-to-ambient R -- 40 thJA a (PCB mount) C/W Maximum junction-to-case (drain) R -- 1.7 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0, I = 250 A 60 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.07 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-source leakage I V = 10 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 48 V, V = 0 V, T = 150 C - - 250 DS GS J b V = 5 V I = 18 A - - 0.05 GS D Drain-source on-state resistance R DS(on) b V = 4 V I = 15 A - - 0.07 GS D Forward transconductance g V = 25 V, I = 18 A 12 - - S fs DS D Dynamic Input capacitance C - 1600 - iss V = 0 V, GS Output capacitance C -V = 25 V, 660- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -170- rss Total gate charge Q -- 35 g I = 30 A, V = 48 V, D DS Gate-source charge Q --V = 5 V 7.1 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --25 gd Turn-on delay time t -14 - d(on) Rise time t - 170 - r V = 30 V, I = 30 A, DD D ns b R = 6 , R = 1 , see fig. 10 Turn-off delay time t -3g D 0- d(off) Fall time t -56- f Between lead, Internal source inductance L -7.5 - nH S and center of die contact Drain-Source Body Diode Characteristics D MOSFET symbol Continuous source-drain diode current I -- 30 S showing the A G integral reverse a Pulsed diode forward current I -- 110 SM p - n junction diode S b Body diode voltage V T = 25 C, I = 30 A, V = 0 V -- 1.6 V SD J S GS Body diode reverse recovery time t - 120 180 ns rr b T = 25 C, I = 30 A, di/dt = 100 A/s J F Body diode reverse recovery charge Q - 700 1300 nC rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S20-0683-Rev. F, 07-Sep-2020 Document Number: 90418 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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