IRLZ34S, SiHLZ34S www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Advanced process technology 2 Surface-mount D PAK (TO-263) 175 C operating temperature Available Fast switching G Fully avalanche rated Available Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 D G Note S S * This datasheet provides information about parts that are N-Channel MOSFET RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details PRODUCT SUMMARY DESCRIPTION V (V) 60 DS Third generation power MOSFETs from Vishay utilize R ( )V = 5 V 0.05 DS(on) GS advanced processing techniques to achieve extremely low Q max. (nC) 35 g on-resistance per silicon area. This benefit, combined with Q (nC) 7.1 gs the fast switching speed and ruggedized device design that Q (nC) 25 gd power MOSFETs are known for, provides the designer with Configuration Single an extremely efficient and reliable device for use in a wide variety of applications. 2 The D PAK (TO-263) is a surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount 2 package. The D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typica l surface-mount application. ORDERING INFORMATION 2 Package D PAK (TO-263) Lead (Pb)-free and halogen-free SiHLZ34S-GE3 Lead (Pb)-free IRLZ34SPbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 60 DS V Gate-source voltage V 10 GS T = 25 C 30 C Continuous drain current V at 5 V I GS D T = 100 C 21 A C a Pulsed drain current I 110 DM Linear derating factor 0.59 W/C b Single pulse avalanche energy E 128 mJ AS Maximum power dissipation T = 25 C 88 C P W D e Maximum power dissipation (PCB mount) T = 25 C 3.7 A c Peak diode recovery dv/dt dv/dt 4.5 V/ns Operating junction and storage temperature range T , T -55 to +175 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 285 H, R = 25 , I = 30 A (see fig. 12) DD J g AS c. I 30 A, di/dt 200 A/s, V V , T 175 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S20-0683-Rev. F, 07-Sep-2020 Document Number: 90418 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRLZ34S, SiHLZ34S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum junction-to-ambient R -- 40 thJA a (PCB mount) C/W Maximum junction-to-case (drain) R -- 1.7 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0, I = 250 A 60 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.07 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-source leakage I V = 10 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 48 V, V = 0 V, T = 150 C - - 250 DS GS J b V = 5 V I = 18 A - - 0.05 GS D Drain-source on-state resistance R DS(on) b V = 4 V I = 15 A - - 0.07 GS D Forward transconductance g V = 25 V, I = 18 A 12 - - S fs DS D Dynamic Input capacitance C - 1600 - iss V = 0 V, GS Output capacitance C -V = 25 V, 660- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -170- rss Total gate charge Q -- 35 g I = 30 A, V = 48 V, D DS Gate-source charge Q --V = 5 V 7.1 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --25 gd Turn-on delay time t -14 - d(on) Rise time t - 170 - r V = 30 V, I = 30 A, DD D ns b R = 6 , R = 1 , see fig. 10 Turn-off delay time t -3g D 0- d(off) Fall time t -56- f Between lead, Internal source inductance L -7.5 - nH S and center of die contact Drain-Source Body Diode Characteristics D MOSFET symbol Continuous source-drain diode current I -- 30 S showing the A G integral reverse a Pulsed diode forward current I -- 110 SM p - n junction diode S b Body diode voltage V T = 25 C, I = 30 A, V = 0 V -- 1.6 V SD J S GS Body diode reverse recovery time t - 120 180 ns rr b T = 25 C, I = 30 A, di/dt = 100 A/s J F Body diode reverse recovery charge Q - 700 1300 nC rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S20-0683-Rev. F, 07-Sep-2020 Document Number: 90418 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000