TM X2-Class HiPerFET V = 650V IXFA22N65X2 DSS Power MOSFET I = 22A IXFP22N65X2 D25 R 145m DS(on) IXFH22N65X2 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S Symbol Test Conditions Maximum Ratings D (Tab) TO-220 (IXFP) V T = 25 C to 150 C 650 V DSS J V T = 25 C to 150 C, R = 1M 650 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM G D I T = 25 C22A S D25 C D (Tab) I T = 25 C, Pulse Width Limited by T 44 A DM C JM TO-247 (IXFH) I T = 25 C5A A C E T = 25 C1J AS C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J G P T = 25 C 390 W D C D D (Tab) S T -55 ... +150 C J T 150 C G = Gate D = Drain JM S = Source Tab = Drain T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Features F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C M Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in d International Standard Packages Low R and Q Weight TO-263 2.5 g DS(ON) G Avalanche Rated TO-220 3.0 g Low Package Inductance TO-247 6.0 g Advantages Symbol Test Conditions Characteristic Values High Power Density (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Easy to Mount BV V = 0V, I = 250A 650 V DSS GS D Space Savings V V = V , I = 1.5mA 3.5 5.0 V GS(th) DS GS D Applications I V = 30V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 10 A Switch-Mode and Resonant-Mode DSS DS DSS GS Power Supplies T = 125C 1.5 mA J DC-DC Converters R V = 10V, I = 0.5 I , Note 1 145 m PFC Circuits DS(on) GS D D25 AC and DC Motor Drives Robotics and Servo Controls 2018 IXYS CORPORATION, All Rights Reserved DS100682C(6/18)IXFA22N65X2 IXFP22N65X2 IXFH22N65X2 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 8 14 S fs DS D D25 R Gate Input Resistance 1.0 Gi C 2190 pF iss C V = 0V, V = 25V, f = 1MHz 1450 pF oss GS DS C 1.3 pF rss Effective Output Capacitance C 92 pF o(er) Energy related V = 0V GS C 330 pF V = 0.8 V o(tr) Time related DS DSS t 30 ns d(on) Resistive Switching Times t 37 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 42 ns d(off) R = 10 (External) G t 18 ns f Q 37 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 12 nC gs GS DS DSS D D25 Q 14 nC gd R 0.32 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 22 A S GS I Repetitive, pulse Width Limited by T 88 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 145 ns rr I = 11A, -di/dt = 100A/ s F Q 890 nC RM V = 100V R I 12 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537