X-On Electronics has gained recognition as a prominent supplier of IXFA34N65X2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFA34N65X2 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXFA34N65X2 IXYS

IXFA34N65X2 electronic component of IXYS
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See Product Specifications
Part No.IXFA34N65X2
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET 650V/34A Ultra Junction X2-Class
Datasheet: IXFA34N65X2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 10.1672
10 : USD 6.659
50 : USD 6.2862
100 : USD 5.4474
500 : USD 4.6396
1000 : USD 3.9043
2500 : USD 3.6764
5000 : USD 3.5522
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 7.4088
3 : USD 6.6625
4 : USD 5.0342
9 : USD 4.7628
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXFA34N65X2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFA34N65X2 and other electronic components in the MOSFETs category and beyond.

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TM X2-Class HiPerFET V = 650V IXFA34N65X2 DSS Power MOSFET I = 34A D25 R 100m DS(on) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 650 V DSS J TO-263 V T = 25 C to 150 C, R = 1M 650 V DGR J GS V Continuous 30 V G GSS S V Transient 40 V GSM D (Tab) I T = 25 C34A D25 C I T = 25 C, Pulse Width Limited by T 68 A DM C JM G = Gate D = Drain S = Source Tab = Drain I T = 25 C10A A C E T = 25 C1J AS C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J P T = 25 C 540 W D C Features T -55 ... +150 C J T 150 C JM International Standard Package T -55 ... +150 C stg Low R and Q DS(ON) G T Maximum Lead Temperature for Soldering 300 C Avalanche Rated L dT/dt Heating / Cooling rate, 175 C - 210 C 50 C/min Low Package Inductance T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD F Mounting Force 10..65 / 2.2..14.6 N/lb C Advantages Weight 2.5 g High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values Applications (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Switch-Mode and Resonant-Mode BV V = 0V, I = 1mA 650 V DSS GS D Power Supplies DC-DC Converters V V = V , I = 2.5mA 3.5 5.0 V GS(th) DS GS D PFC Circuits I V = 30V, V = 0V 100 nA AC and DC Motor Drives GSS GS DS Robotics and Servo Controls I V = V , V = 0V 10 A DSS DS DSS GS T = 125C 1.75 mA J R V = 10V, I = 0.5 I , Note 1 100 m DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS100895A(4/18) IXFA34N65X2 Symbol Test Conditions Characteristic Values TO-263 (IXFA) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 12 20 S fs DS D D25 R Gate Input Resistance 0.8 Gi C 3230 pF iss C V = 0V, V = 25V, f = 1MHz 2000 pF oss GS DS C 2 pF rss 1 = Gate Effective Output Capacitance 2 = Drain C 130 pF o(er) Energy related 3 = Source V = 0V GS 4 = Drain C 486 pF V = 0.8 V o(tr) Time related DS DSS t 37 ns d(on) Resistive Switching Times t 60 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 64 ns d(off) R = 10 (External) G t 30 ns f Q 56 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 19 nC gs GS DS DSS D D25 Q 18 nC gd R 0.23 C/W thJC Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 34 A S GS I Repetitive, pulse Width Limited by T 136 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 164 ns rr I = 17A, -di/dt = 100A/ s F Q 1.2 C RM V = 100V R I 14.4 A RM Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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