TM X2-Class HiPerFET V = 650V IXFA34N65X2 DSS Power MOSFET I = 34A D25 R 100m DS(on) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 650 V DSS J TO-263 V T = 25 C to 150 C, R = 1M 650 V DGR J GS V Continuous 30 V G GSS S V Transient 40 V GSM D (Tab) I T = 25 C34A D25 C I T = 25 C, Pulse Width Limited by T 68 A DM C JM G = Gate D = Drain S = Source Tab = Drain I T = 25 C10A A C E T = 25 C1J AS C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J P T = 25 C 540 W D C Features T -55 ... +150 C J T 150 C JM International Standard Package T -55 ... +150 C stg Low R and Q DS(ON) G T Maximum Lead Temperature for Soldering 300 C Avalanche Rated L dT/dt Heating / Cooling rate, 175 C - 210 C 50 C/min Low Package Inductance T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD F Mounting Force 10..65 / 2.2..14.6 N/lb C Advantages Weight 2.5 g High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values Applications (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Switch-Mode and Resonant-Mode BV V = 0V, I = 1mA 650 V DSS GS D Power Supplies DC-DC Converters V V = V , I = 2.5mA 3.5 5.0 V GS(th) DS GS D PFC Circuits I V = 30V, V = 0V 100 nA AC and DC Motor Drives GSS GS DS Robotics and Servo Controls I V = V , V = 0V 10 A DSS DS DSS GS T = 125C 1.75 mA J R V = 10V, I = 0.5 I , Note 1 100 m DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS100895A(4/18) IXFA34N65X2 Symbol Test Conditions Characteristic Values TO-263 (IXFA) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 12 20 S fs DS D D25 R Gate Input Resistance 0.8 Gi C 3230 pF iss C V = 0V, V = 25V, f = 1MHz 2000 pF oss GS DS C 2 pF rss 1 = Gate Effective Output Capacitance 2 = Drain C 130 pF o(er) Energy related 3 = Source V = 0V GS 4 = Drain C 486 pF V = 0.8 V o(tr) Time related DS DSS t 37 ns d(on) Resistive Switching Times t 60 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 64 ns d(off) R = 10 (External) G t 30 ns f Q 56 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 19 nC gs GS DS DSS D D25 Q 18 nC gd R 0.23 C/W thJC Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 34 A S GS I Repetitive, pulse Width Limited by T 136 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 164 ns rr I = 17A, -di/dt = 100A/ s F Q 1.2 C RM V = 100V R I 14.4 A RM Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537